The performance of sensing surfaces highly relies on nanostructures to enhance their sensitivity and specificity. Herein, nanostructured zinc oxide (ZnO) thin films of various thicknesses were coated on glass and p-type silicon substrates using a sol-gel spin-coating technique. The deposited films were characterized for morphological, structural, and optoelectronic properties by high-resolution measurements. X-ray diffraction analyses revealed that the deposited films have a c-axis orientation and display peaks that refer to ZnO, which exhibits a hexagonal structure with a preferable plane orientation (002). The thicknesses of ZnO thin films prepared using 1, 3, 5, and 7 cycles were measured to be 40, 60, 100, and 200 nm, respectively. The increment in grain size of the thin film from 21 to 52 nm was noticed, when its thickness was increased from 40 to 200 nm, whereas the band gap value decreased from 3.282 to 3.268 eV. Band gap value of ZnO thin film with thickness of 200 nm at pH ranging from 2 to 10 reduces from 3.263eV to 3.200 eV. Furthermore, to evaluate the transducing capacity of the ZnO nanostructure, the refractive index, optoelectric constant, and bulk modulus were analyzed and correlated. The highest thickness (200 nm) of ZnO film, embedded with an interdigitated electrode that behaves as a pH-sensing electrode, could sense pH variations in the range of 2-10. It showed a highly sensitive response of 444 μAmM-1cm-2 with a linear regression of R2 =0.9304. The measured sensitivity of the developed device for pH per unit is 3.72μA/pH.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4500498PMC
http://journals.plos.org/plosone/article?id=10.1371/journal.pone.0132755PLOS

Publication Analysis

Top Keywords

zno thin
12
zinc oxide
8
thin films
8
deposited films
8
thin film
8
band gap
8
thickness 200
8
zno
6
thin
5
low temperature
4

Similar Publications

Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer.

Nano Converg

January 2025

Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup-si, Jeolabuk-do, 56212, Republic of Korea.

Metal-oxide thin-film semiconductors have been highlighted as next-generation space semiconductors owing to their excellent radiation hardness based on their dimensional advantages of very low thickness and insensitivity to crystal structure. However, thin-film transistors (TFTs) do not exhibit intrinsic radiation hardness owing to the chemical reactions at the interface exposed to ambient air. In this study, significantly enhanced radiation hardness of AlO-passivated ZnO TFTs against high-energy protons with energies of up to 100 MeV is obtained owing to the passivation layer blocking interactions with external reactants, thereby maintaining the chemical stability of the thin-film semiconductor.

View Article and Find Full Text PDF

Different application domains impose diverse and often conflicting requirements on the optoelectronic performance of metal oxide semiconductor (MOS) thin-film transistors (TFTs). These varying demands present substantial challenges in the selection of TFT materials and the optimization of device performance. This study begins by examining three primary application areas for TFTs: display drivers, photodetectors, and optoelectronic synapses.

View Article and Find Full Text PDF

This study provides a comprehensive structural, chemical, and optical characterization of CZTS thin films deposited on flexible Kapton substrates via the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The investigation explored the effects of varying deposition cycles (40, 60, 70, and 80) and annealing treatments on the films. An X-ray diffraction (XRD) analysis demonstrated enhanced crystallinity and phase purity, particularly in films deposited with 70 cycles.

View Article and Find Full Text PDF

Cupric oxide (CuO) is a promising p-type semiconducting oxide used in many critical fields, such as energy conversion and storage, and gas sensors, which is attributed to its unique optoelectrical properties and cost-effectiveness. This work successfully deposited amorphous, pinhole-free, ultrathin CuO films using atmospheric pressure spatial atomic layer deposition (SALD) with copper(II) acetylacetonate and ozone as precursors. The growth rate increased from 0.

View Article and Find Full Text PDF

Nanoscale semiconductors offer significant advantages over their bulk semiconductor equivalents for electronic devices as a result of the ability to geometrically tune electronic properties, the absence of internal grain boundaries, and the very low absolute number of defects that are present in such small volumes of material. However, these advantages can only be realized if reliable contacts can be made to the nanoscale semiconductor using a scalable, low-cost process. Although there are many low-cost "bottom-up" techniques for directly growing nanomaterials, the fabrication of contacts at the nanoscale usually requires expensive and slow techniques like e-beam lithography that are also hard to scale to a level of throughput that is required for commercialization.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!