Tuning the polarity of charge transport in InSb nanowires via heat treatment.

Nanotechnology

Jagiellonian University in Krakow, Department of Physical Chemistry and Electrochemistry, Ingardena 3, 30-060 Krakow, Poland. AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, A. Mickiewicza 30, 30-059 Krakow, Poland.

Published: July 2015

InSb nanowire (NW) arrays were prepared by pulsed electrodeposition combined with a porous template technique. The resulting polycrystalline material has a stoichiometric composition (In:Sb = 1:1) and a high length-to-diameter ratio. Based on a combination of Fourier transform infrared spectroscopy (FTIR) analysis and field-effect measurements, the band gap, the charge carrier polarity, the carrier concentration, the mobility and the effective mass for the InSb NWs was investigated. In this preliminary work, a transition from p-type to n-type charge transport was observed when the InSb NWs were subjected to annealing.

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Source
http://dx.doi.org/10.1088/0957-4484/26/28/285701DOI Listing

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