Graphene as a Massless Electrode for Ultrahigh-Frequency Piezoelectric Nanoelectromechanical Systems.

Nano Lett

†Department of Electrical and Computer Engineering and ‡Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States.

Published: July 2015

Designing "ideal electrodes" that simultaneously guarantee low mechanical damping and electrical loss as well as high electromechanical coupling in ultralow-volume piezoelectric nanomechanical structures can be considered to be a key challenge in the NEMS field. We show that mechanically transferred graphene, floating at van der Waals proximity, closely mimics "ideal electrodes" for ultrahigh frequency (0.2 GHz < f0 < 2.6 GHz) piezoelectric nanoelectromechanical resonators with negligible mechanical mass and interfacial strain and perfect radio frequency electric field confinement. These unique attributes enable graphene-electrode-based piezoelectric nanoelectromechanical resonators to operate at their theoretically "unloaded" frequency-limits with significantly improved electromechanical performance compared to metal-electrode counterparts, despite their reduced volumes. This represents a spectacular trend inversion in the scaling of piezoelectric electromechanical resonators, opening up new possibilities for the implementation of nanoelectromechanical systems with unprecedented performance.

Download full-text PDF

Source
http://dx.doi.org/10.1021/acs.nanolett.5b01208DOI Listing

Publication Analysis

Top Keywords

piezoelectric nanoelectromechanical
12
nanoelectromechanical systems
8
"ideal electrodes"
8
nanoelectromechanical resonators
8
piezoelectric
5
graphene massless
4
massless electrode
4
electrode ultrahigh-frequency
4
ultrahigh-frequency piezoelectric
4
nanoelectromechanical
4

Similar Publications

An unconventional yet facile low-energy method for uniquely synthesizing neat poly(vinylidene fluoride) (PVDF) films for energy harvesting applications by utilizing nanoelectromechanical vibration through a 'piezo-to-piezo' (P2P) mechanism is reported. In this concept, the nanoelectromechanical energy from a piezoelectric substrate is directly coupled into another polarizable material (, PVDF) during its crystallization to produce an optically transparent micron-thick film that not only exhibits strong piezoelectricity, but is also freestanding-properties ideal for its use for energy harvesting, but which are difficult to achieve through conventional synthesis routes. We show, particularly through characterization, that the unprecedented acceleration associated with the nanoelectromechanical vibration in the form of surface reflected bulk waves (SRBWs) facilitates preferentially-oriented nucleation of the ferroelectric PVDF β-phase, while simultaneously aligning its dipoles to pole the material through the SRBW's intense native evanescent electric field .

View Article and Find Full Text PDF

Low-dimensional van der Waals (vdW) three-dimensional (3D) topological insulators (TIs) have been overlooked, regarding their electromechanical properties. In this study, we experimentally investigate the electromechanical coupling of low-dimensional 3D TIs with a centrosymmetric crystal structure, where a binary compound, bismuth selenide (BiSe), is taken as an example. Piezoresponse force microscopy (PFM) results of BiSe nanoflakes show that the material exhibits both out-of-plane and in-plane electromechanical responses.

View Article and Find Full Text PDF

Piezoelectric material-based devices have garnered considerable attention from scientists and engineers due to their unique physical characteristics, resulting in numerous intriguing and practical applications. Among these, flexural-mode piezoelectric resonators (FMPRs) are progressively gaining prominence due to their compact, precise, and efficient performance in diverse applications. FMPRs, resonators that utilize one- or two-dimensional piezoelectric materials as their resonant structure, vibrate in a flexural mode.

View Article and Find Full Text PDF

Piezotronic Transistors Based on GaN Wafer for Highly Sensitive Pressure Sensing with High Linearity and High Stability.

ACS Nano

May 2024

MIIT Key Laboratory of Complex-field Intelligent Exploration, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.

Piezotronic effect utilizing strain-induced piezoelectric polarization to achieve interfacial engineering in semiconductor nanodevices exhibits great advantages in applications such as human-machine interfacing, micro/nanoelectromechanical systems, and next-generation sensors and transducers. However, it is a big challenge but highly desired to develop a highly sensitive piezotronic device based on piezoelectric semiconductor wafers and thus to push piezotronics toward wafer-scale applications. Here, we develop a bicrystal barrier-based piezotronic transistor for highly sensitive pressure sensing by -GaN single-crystal wafers.

View Article and Find Full Text PDF

Piezoelectric Applications of Low-Dimensional Composites and Porous Materials.

Materials (Basel)

February 2024

School of Engineering, Design and Built Environment, Western Sydney University, Penrith, NSW 2751, Australia.

Low-dimensional (LD) materials, with atomically thin anisotropic structures, exhibit remarkable physical and chemical properties, prominently featuring piezoelectricity resulting from the absence of centrosymmetry. This characteristic has led to diverse applications, including sensors, actuators, and micro- and nanoelectromechanical systems. While piezoelectric effects are observed across zero-dimensional (0D), one-dimensional (1D), and two-dimensional (2D) LD materials, challenges such as effective charge separation and crystal structure imperfections limit their full potential.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!