A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency.

Chem Commun (Camb)

Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China.

Published: June 2015

AI Article Synopsis

  • Cu2ZnSnS4 (CZTS) thin films were created with varying thicknesses (0.35 to 1.85 μm) and micron-sized grains (0.5-1.5 μm) through co-electrodeposition of Cu-Zn-Sn-S precursors with different times.
  • A new approach was introduced using a sputtered CdS buffer layer, marking a first step for CZTS solar cell advancement.
  • This combination has resulted in significant improvements, achieving solar cell efficiencies of up to 6.6%.

Article Abstract

Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.

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Source
http://dx.doi.org/10.1039/c5cc01170aDOI Listing

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