Mono- and polynucleation, atomistic growth, and crystal phase of III-V nanowires under varying group V flow.

J Chem Phys

Saint Petersburg Academic University, Khlopina 8/3, 194021 Saint Petersburg, Russia; Ioffe Physical Technical Institute, RAS, Politekhnicheskaya 26, 194021 Saint Petersburg, Russia; and ITMO University, Kronverkskiy pr. 49, 197101 Saint Petersburg, Russia.

Published: May 2015

We present a refined model for the vapor-liquid-solid growth and crystal structure of Au-catalyzed III-V nanowires, which revisits several assumptions used so far and is capable of describing the transition from mononuclear to polynuclear regime and ultimately to regular atomistic growth. We construct the crystal phase diagrams and calculate the wurtzite percentages, elongation rates, critical sizes, and polynucleation thresholds of Au-catalyzed GaAs nanowires depending on the As flow. We find a non-monotonic dependence of the crystal phase on the group V flow, with the zincblende structure being preferred at low and high group V flows and the wurtzite structure forming at intermediate group V flows. This correlates with most of the available experimental data. Finally, we discuss the atomistic growth picture which yields zincblende crystal structure and should be very advantageous for fabrication of ternary III-V nanowires with well-controlled composition and heterointerfaces.

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Source
http://dx.doi.org/10.1063/1.4921569DOI Listing

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