We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the quantum-wire axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the quantum wire.
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http://dx.doi.org/10.1088/0953-8984/27/25/255002 | DOI Listing |
Sensors (Basel)
January 2024
School of Electrical Engineering, Chongqing University, Chongqing 400044, China.
This paper proposes a non-contact current measurement method for three-phase rectangular busbars based on TMR (tunneling magneto-resistance) sensors, due to their advantages of large dynamic range, wide bandwidth, light weight, and easy installation. A non-contact current sensor composed of only three TMR sensors is developed and the TMR sensors are respectively placed at a location with a certain distance from the surface of each rectangular busbar to measure the magnetic fields generated by the busbar currents. To calibrate the developed current sensor, i.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2023
Seagate Technology, 1 Disc Drive, Derry BT48 0BF, United Kingdom.
A three-dimensional self-consistent spin transport model is developed, which includes both tunnelling transport, leading to tunnelling magneto-resistance, as well as metallic transport, leading to giant magneto-resistance. An explicit solution to the drift-diffusion model is also derived, which allows analysing the effect of both the reference and free layer thickness on the spin-transfer torque polarization and field-like coefficient. It is shown the model developed here can be used to compute the signal-to-noise ratio in realistic magnetic read-heads, where spin torque-induced fluctuations and instabilities limit the maximum operating voltage.
View Article and Find Full Text PDFACS Nano
September 2022
Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.
We report on large spin-filtering effects in epitaxial graphene-based spin valves, strongly enhanced in our specific multilayer case. Our results were obtained by the effective association of chemical vapor deposited (CVD) multilayer graphene with a high quality epitaxial Ni(111) ferromagnetic spin source. We highlight that the Ni(111) spin source electrode crystallinity and metallic state are preserved and stabilized by multilayer graphene CVD growth.
View Article and Find Full Text PDFRev Sci Instrum
May 2022
Aptiv Services Poland S.A., Krakow 30-707, Poland and Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
This article focuses on the spin-torque ferromagnetic resonance (STFMR) technique, which was developed and optimized to investigate spin-transfer effects in magnetic tunnel junctions (MTJ) and spin Hall effect phenomena in ferromagnet/non-magnetic heavy metal bilayer systems. The devices for STFMR are typically fabricated with co-planar waveguides with contact pads for applying radio frequency or direct current, I(I). The device under investigation was a CoFeB/MgO/CoFeB based MTJ with a resistance-area product of 1.
View Article and Find Full Text PDFSci Rep
February 2022
School of Instrument and Electronics, North University of China, Taiyuan, 030051, Shanxi, China.
A high-precision micro-displacement sensor based on tunnel magneto-resistance effect is reported.We designed and simulated magnetic characteristics of the sensor, and employed chip-level Au-In bonding to implement low-temperature assembly of the TMR devices. We employed the subdivision interpolation technique to enhance the resolution by translating the sine-cosine outputs of a TMR sensor into an output that varies linearly with the displacement.
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