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Ultrafast Laser-Induced Spin Dynamics in All-Semiconductor Ferromagnetic CrSBr-Phosphorene Heterostructures.
J Phys Chem Lett
January 2025
School of Physics, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Ultrashort laser pulses are extensively used for efficient manipulation of interfacial spin injection in two-dimensional van der Waals (vdW) heterostructures. However, physical processes accompanying the photoinduced spin transfer dynamics on the all-semiconductor ferromagnetic vdW heterostructure remain largely unexplored. Here, we present a computational investigation of the femtosecond laser pulse induced purely electron-mediated spin transfer dynamics at a time scale of less than 50 fs in a vdW heterostructure.
View Article and Find Full Text PDFTwo-Dimensional Phototransistors with van der Waals Superstructure Contacts for High-Performance Photosensing.
ACS Appl Mater Interfaces
January 2025
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Semiconducting transition metal dichalcogenides (TMDs) possess exceptional photoelectronic properties, rendering them excellent channel materials for phototransistors and holding great promise for future optoelectronics. However, the attainment of high-performance photodetection has been impeded by challenges pertaining to electrical contact. To surmount this obstacle, we introduce a phototransistor architecture, in which the WS channel is connected with an alternating WS-WSe strip superstructure, strategically positioned alongside the source and drain contact regions.
View Article and Find Full Text PDFElectron-phonon coupling and thermal transport properties of GaN/AlGaN heterojunction under strain regulation.
Phys Chem Chem Phys
January 2025
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.
In the study of GaN/AlGaN heterostructure thermal transport, the interference of strain on carriers cannot be ignored. Although existing research has mainly focused on the intrinsic electronic and phonon behavior of the materials, there is a lack of studies on the transport characteristics of the electron-phonon coupling in heterostructures under strain control. This research comprehensively applies first-principles calculations and the Boltzmann transport equation simulation method to deeply analyze the thermal transport mechanism of the GaN/AlGaN heterojunction considering in-plane strain, with particular attention to the regulatory role of electron-phonon coupling on thermal transport.
View Article and Find Full Text PDFPreliminary mechanistic insights into the detection of ethanol vapour using MnO NRs-CNPs-poly-4-(vinylpyridine) based solid-state sensor operating at room temperature.
Heliyon
January 2025
Department of Chemical Sciences, University of Johannesburg, PO Box 17011, Doornfontein, 2028, Johannesburg, South Africa.
Semiconductor metal oxide gas sensors are widely used to detect ethanol vapours, commonly used in industrial productions, road safety detection, and solvent production; however, they operate at extremely high temperatures. In this work, we present manganese dioxide nanorods (MnO NRs) prepared via hydrothermal synthetic route, carbon soot (CNPs) prepared via pyrolysis of lighthouse candle, and poly-4-vinylpyridine (P4VP) composite for the detection of ethanol vapour at room temperature. MnO, CNPs, P4VP, and MnO NRs-CNPs-P4VP composite were characterised using scanning electron microscopy, transmission electron microscopy, powder X-ray diffraction, Fourier transform infrared spectroscopy, and Raman spectroscopy.
View Article and Find Full Text PDFLow-Temperature Growth of Centimeter-Sized 2D PdSe by Self-Limiting Liquid-Phase Edge Epitaxy.
J Am Chem Soc
January 2025
School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.
Two-dimensional (2D) PdSe atomic crystals hold great potential for optoelectronic applications due to their bipolar electrical characteristics, tunable bandgap, high electron mobility, and exceptional air stability. Nevertheless, the scalable synthesis of large-area, high-quality 2D PdSe crystals using chemical vapor deposition (CVD) remains a significant challenge. Here, we present a self-limiting liquid-phase edge-epitaxy (SLE) low-temperature growth method to achieve high-quality, centimeter-sized PdSe films with single-crystal domain areas exceeding 30 μm.
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