Direct monitoring of ultrafast electron and hole dynamics in perovskite solar cells.

Phys Chem Chem Phys

Departamento de Química Física, Facultad de Ciencias Ambientales y Bioquímica, and INAMOL, Universidad de Castilla-La Mancha, Avenida Carlos III, S/N, 45071 Toledo, Spain.

Published: June 2015

Organic-inorganic hybrid perovskite solar cells have emerged as cost effective efficient light-to-electricity conversion devices. Unravelling the time scale and the mechanisms that govern the charge carrier dynamics is of paramount importance for a clear understanding and further optimization of the perovskite based devices. For the classical FTO/bulk titania blocking layer/mesoporous titania/perovskite/Spiro-OMeTAD (FTO/TPS) cell, further detailed and systematic studies of the ultrafast events related to exciton generation, electron and hole transfer, ultrafast relaxation are still needed. We characterize the initial ultrafast processes attributed to the exciton-perovskite lattice interactions influenced by charge transfer to the electron and hole transporters that precede the exciton diffusion into free charge carriers occurring in the sensitizer. Time-resolved transient absorption studies of the FTO/perovskite and FTO/TPS samples under excitation at different wavelengths and at low fluence 2 (μJ cm(-2)) indicate the sub-picosecond electron and hole injection into titania and Spiro-OMeTAD, respectively. Furthermore, the power-dependent femtosecond transient absorption measurements support the ultrafast charge transfer and show strong Auger-type multiparticle interactions at early times. We reveal that the decays of the internal trap states are the same for both films, while those at surfaces differ. The contribution of the former in the recombination is small, thus increasing the survival probability of the charges in the excited perovskite.

Download full-text PDF

Source
http://dx.doi.org/10.1039/c5cp01119aDOI Listing

Publication Analysis

Top Keywords

electron hole
16
perovskite solar
8
solar cells
8
charge transfer
8
transient absorption
8
ultrafast
5
direct monitoring
4
monitoring ultrafast
4
electron
4
ultrafast electron
4

Similar Publications

We employed machine learning (ML) techniques combined with potential-dependent photoelectrochemical impedance spectroscopy (pot-PEIS) to gain deeper insights into the charge transport mechanisms of hematite (α-FeO) photoanodes. By the Shapley Additive exPlanations (SHAP) analysis from the ML model constructed from a small data set (dozens of samples) of electrical parameters obtained from pot-PEIS and the PEC performance, we identified the dominant factors influencing the electron transport to the back contact in the bulk and hole transfer to a solution at the hematite/electrolyte interface. The results revealed that shallow defect states significantly enhance electron transport, while deep defect states impede it, and also one of the surface states enhances the hole transfer to the electrolyte solution.

View Article and Find Full Text PDF

The self-assembly of fibrin is a vital process in blood clotting, primarily facilitated by the interactions between knobs "A" and "B" in the central E region of one molecule and the corresponding holes "a" and "b" in the peripheral D regions of two other fibrin molecules. However, the precise function of the interactions between knob "B" and hole "b" during fibrin polymerization remains a subject of ongoing debate. The present study focuses on investigating intermolecular interactions between knob "B" and hole "b".

View Article and Find Full Text PDF

Germanium nanocrystal non-volatile memory devices: fabrication, charge storage mechanism and characterization.

Nanoscale

January 2025

Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583.

The widespread proliferation and increasing use of portable electronic devices and wearables, and the recent developments in artificial intelligence and internet-of-things, have fuelled the need for high-density and low-voltage non-volatile memory devices. Nanocrystal memory, an emergent non-volatile memory (NVM) device that makes use of the Coulomb blockade effect, can potentially result in the scaling of the tunnel dielectric layer to a very small thickness. Since the nanocrystals are electrically isolated, potential charge leakage paths localized defects in the thin tunnel dielectric can be substantially reduced, unlike that in a continuous polysilicon floating gate structure.

View Article and Find Full Text PDF

We present an investigation into the effects of high-energy proton damage on charge trapping in germanium cross-strip detectors with the goal of accomplishing three important measurements. First, we calibrated and characterized the spectral resolution of a spare COSI-balloon detector in order to determine the effects of intrinsic trapping, finding that electron trapping due to impurities dominates over hole trapping in the undamaged detector. Second, we performed two rounds of proton irradiation of the detector in order to quantify, for the first time, the rate at which charge traps are produced by proton irradiation.

View Article and Find Full Text PDF

Temperature-Dependent Water Oxidation Kinetics: Implications and Insights.

ACS Cent Sci

January 2025

Department of Chemistry, Merkert Chemistry Center, Boston College, Chestnut Hill, Massachusetts 02467, United States.

As a vital process for solar fuel synthesis, water oxidation remains a challenging reaction to perform using durable and cost-effective systems. Despite decades of intense research, our understanding of the detailed processes involved is still limited, particularly under photochemical conditions. Recent research has shown that the overall kinetics of water oxidation by a molecular dyad depends on the coordination between photocharge generation and the subsequent chemical steps.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!