We report on the design, fabrication and performance of a hetero-integrated III-V on silicon distributed feedback lasers (DFB) at 1310 nm based on direct bonding and adiabatic coupling. The continuous wave (CW) regime is achieved up to 55 °C as well as mode-hop-free operation with side-mode suppression ratio (SMSR) above 55 dB. At room temperature, the current threshold is 36 mA and the maximum coupled power in the silicon waveguide is 22 mW.
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| http://dx.doi.org/10.1364/OE.23.008489 | DOI Listing |
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