We report on the complete experimental evaluation of a GaInNAs/GaAs (dilute nitride) semiconductor optical amplifier that operates at 1.3 μm and exhibits 28 dB gain and a gain recovery time of 100 ps. Successful wavelength conversion operation is demonstrated using pseudorandom bit sequence 2-1 non-return-to-zero bit streams at 5 and 10 Gb/s, yielding error-free performance and showing feasibility for implementation in various signal processing functionalities. The operational credentials of the device are analyzed in various operational regimes, while its nonlinear performance is examined in terms of four-wave mixing. Moreover, characterization results reveal enhanced temperature stability with almost no gain variation around the 1320 nm region for a temperature range from 20°C to 50°C. The operational characteristics of the device, along with the cost and energy benefits of dilute nitride technology, make it very attractive for application in optical access networks and dense photonic integrated circuits.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/AO.54.000046 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Graphene/TiO Heterostructure Integrated with a Micro-Lightplate for Low-Power NO Gas Detection.
Sensors (Basel)
January 2025
Institute of Physics, University of Tartu, EE-50411 Tartu, Estonia.
Low-power gas sensors that can be used in IoT (Internet of Things) systems, consumer devices, and point-of-care devices will enable new applications in environmental monitoring and health protection. We fabricated a monolithic chemiresistive gas sensor by integrating a micro-lightplate with a 2D sensing material composed of single-layer graphene and monolayer-thick TiO. Applying ultraviolet (380 nm) light with quantum energy above the TiO bandgap effectively enhanced the sensor responses.
View Article and Find Full Text PDFHybrids of Deep HOMO Organic Cyanoacrylic Acid Dyes and Graphene Nanomaterials for Water Splitting Photoanodes.
Materials (Basel)
January 2025
Departamento de Química Orgánica, Universidad de Zaragoza, 50009 Zaragoza, Spain.
Dye-sensitization is a promising strategy to improve the light absorption and photoactivity abilities of wide-bandgap semiconductors, like TiO. For effective water-splitting photoanodes with no sacrificial agents, the electrochemical potential of the dye must exceed the thermodynamic threshold needed for the oxygen evolution reaction. This study investigates two promising organic cyanoacrylic dyes, designed to meet that criterion by means of theoretical calculations.
View Article and Find Full Text PDFHigh-Temperature Optoelectronic Transport Behavior of n-TiO Nanoball-Stick/p-Lightly Boron-Doped Diamond Heterojunction.
Materials (Basel)
January 2025
Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China.
The n-TiO nanoballs-sticks (TiO NBSs) were successfully deposited on p-lightly boron-doped diamond (LBDD) substrates by the hydrothermal method. The temperature-dependent optoelectronic properties and carrier transport behavior of the n-TiO NBS/p-LBDD heterojunction were investigated. The photoluminescence (PL) of the heterojunction detected four distinct emission peaks at 402 nm, 410 nm, 429 nm, and 456 nm that have the potential to be applied in white-green light-emitting devices.
View Article and Find Full Text PDFHigh-Mobility All-Transparent TFTs with Dual-Functional Amorphous IZTO for Channel and Transparent Conductive Electrodes.
Materials (Basel)
January 2025
Department of IT Semiconductor Convergence Engineering, Research Institute of Advanced Convergence Technology, Tech University of Korea, Siheung 15073, Republic of Korea.
The increasing demand for advanced transparent and flexible display technologies has led to significant research in thin-film transistors (TFTs) with high mobility, transparency, and mechanical robustness. In this study, we fabricated all-transparent TFTs (AT-TFTs) utilizing amorphous indium-zinc-tin-oxide (a-IZTO) as a dual-functional material for both the channel layer and transparent conductive electrodes (TCEs). The a-IZTO was deposited using radio-frequency magnetron sputtering, with its composition adjusted for both channel and electrode functionality.
View Article and Find Full Text PDFTransparent OLED displays for selective bidirectional viewing using ZnO/Yb:Ag cathode with highly smooth and low-barrier surface.
Light Sci Appl
January 2025
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon-si, Republic of Korea.
Transparent organic light-emitting diode (TrOLED) displays represent cutting-edge technology posed to significantly enhance user experience. This study addresses two pivotal challenges in TrOLED development. Firstly, we focus on the innovation of transparent cathodes, a fundamental component in TrOLEDs, by introducing a ZnO/Yb:Ag cathode.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!