Yttrium-doped ZnO (YZO) nanorods were synthesized by hydrothermal growth on a quartz substrate with various post-annealing temperatures. To investigate the effects of post-annealing on the optical properties and parameters of the nanorods, X-ray diffractometry (XRD), photoluminescence (PL) measurement, and ultraviolet (UV)-visible spectroscopy were used. From the XRD investigation, the full width at half maximum (FWHM) and the dislocation density of the nanorods was found to increase with an increase in the post-annealing temperature. In the PL spectra, the intensity of the near band edge (NBE) emission peak in the UV region also increases with an increase in the temperature of post-annealing. The deep level emission (DLE) peak in the visible region changes with various post-annealing temperatures, and its intensity increases remarkably with post-annealing at 800 degrees C. In this paper, changes in the optical parameters of the nanorods caused by variation in the behavior of Y during post-annealing was investigated, with properties such as absorption coefficients, refractive indices, and dispersion parameters being obtained from transmittance and reflectance analysis.
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http://dx.doi.org/10.1166/jnn.2014.9937 | DOI Listing |
Nanoscale
January 2025
School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
CsCuI is considered a promising material for lead-free resistive switching (RS) memory devices due to its low operating voltage, high on/off ratio, and excellent thermal and environmental stability. However, conventional lead-free halide-based RS memory devices typically require solvent-based thin-film formation processes that involve toxic organic and acidic solvents, and the effects of process conditions on device performance are often not fully understood. This study investigates the effect of crystallinity on CsCuI-based RS memory devices fabricated thermal evaporation.
View Article and Find Full Text PDFAdv Mater
December 2024
Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
Rationalizing synthetic pathways is crucial for material design and property optimization, especially for polymorphic and metastable phases. Over-stoichiometric rocksalt (ORX) compounds, characterized by their face-sharing configurations, are a promising group of materials with unique properties; however, their development is significantly hindered by challenges in synthesizability. Here, taking the recently identified Li superionic conductor, over-stoichiometric rocksalt Li-In-Sn-O (o-LISO) material as a prototypical ORX compound, the mechanisms of phase formation are systematically investigated.
View Article and Find Full Text PDFAdv Mater
December 2024
Institute of Electronics, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Amorphous oxide semiconductors (AOS) are pivotal for next-generation electronics due to their high electron mobility and excellent optical properties. However, InO, a key material in this family, encounters significant challenges in balancing high mobility and effective switching as its thickness is scaled down to nanometer dimensions. The high electron density in ultra-thin InO hinders its ability to turn off effectively, leading to a critical trade-off between mobility and the on-current (I)/off-current (I) ratio.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2024
Institute of Chemistry, Chemical Technology I, Carl von Ossietzky University of Oldenburg, Carl-von-Ossietzky-Str. 9-11, 26129 Oldenburg, Germany.
Earth-abundant transition metal oxides are promising alternatives to precious metal oxides as electrocatalysts for the oxygen evolution reaction (OER) and are intensively investigated for alkaline water electrolysis. OER electrocatalysis, like most other catalytic reactions, is surface-initiated, and the catalyst performance is fundamentally determined by the surface properties. Most transition metal oxide catalysts show OER activities that depend on the predominantly exposed crystal facets/surface structure.
View Article and Find Full Text PDFNanotechnology
October 2024
Department of Nanoscale Semiconduector Engineering, Hanyang University, Seoul 133-791, Republic of Korea.
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