AI Article Synopsis
- This paper introduces a new method for extracting source and drain series resistances in silicon nanowire MOSFETs using small-signal radio-frequency analysis.
- The method works for devices with both finite off-state resistance and gate bias-dependent on-state resistance, utilizing 3-D device simulations.
- The accuracy of this new extraction technique is confirmed through comparisons with existing methods and Z22- and Y-parameter measurements at frequencies up to 100 GHz.
Article Abstract
This paper presents a new extraction method for source and drain (S/D) series resistances of silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on small-signal radio-frequency (RF) analysis. The proposed method can be applied to the extraction of S/D series resistances for SNW MOSFETs with finite off-state channel resistance as well as gate bias-dependent on-state resistive components realized by 3-dimensional (3-D) device simulation. The series resistances as a function of frequency and gate voltage are presented and compared with the results obtained by an existing method with infinite off-state channel resistance model. The accuracy of the newly proposed parameter extraction method has been successfully verified by Z22- and Y-parameters up to 100 GHz operation frequency.
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| http://dx.doi.org/10.1166/jnn.2014.9884 | DOI Listing |
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