Electrical characteristics of metal oxide based multi-layer vertical resistive switching memories.

The electrical properties of vertical resistive switching random access memories (VRRAMs) were investigated to enhance their device performance by using a stochastic method based on the generation and the rupture probability of the conductive filaments (CFs) together with a tunneling model. The carrier transport mechanisms were dominantly attributed to the tunneling current between the CFs and the electrode. Carrier transport mechanisms of the high resistance state current were dominantly attributed to the direct tunneling current between the electrode and the CFs locating at nearest the electrode. The simulated forming voltages of the VRRAMs were in reasonable agreement with the experimental data. The low resistance/high resistance state current ratio of the VRRAMs was improved due to an increase in the distance between the CFs and the electrode of the VRRAMs with a barrier material after a reset operation. These results can help understanding electrical characteristics and optimal structures of the VRRAMs.