Solution-processed p-n heterojunction photodiodes have been fabricated based on transition-metal oxides in which NiO and ternary Zn(1-x)Mg(x)O (x = 0-0.1) have been employed as p-type and n-type semiconductors, respectively. Composition-related structural, electrical, and optical properties are also investigated for all the films. It has been observed that the bandgap of Zn(1-x)Mg(x)O films can be tuned between 3.24 and 3.49 eV by increasing Mg content. The fabricated highly visible-blind p-n junction photodiodes show an excellent rectification ratio along with good photoresponse and quantum efficiency under ultraviolet (UV) illumination. With an applied reverse bias of 1 V and depending on the value of x, the maximum responsivity of the devices varies between 0.22 and 0.4 A/W and the detectivity varies between 0.17 × 10(12) and 2.2 × 10(12) cm (Hz)(1/2)/W. The photodetectors show an excellent UV-to-visible rejection ratio. Compositional nonuniformity has been observed locally in the alloyed films with x = 0.1, which is manifested in photoresponse and X-ray analysis data. This paper demonstrates simple solution-processed, low cost, band tunable photodiodes with excellent figures of merit operated under low bias.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acsami.5b01420 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Enhancing Stability of n-Type Doped Organic Semiconductors through Low Boiling Point Solvent-Assisted Room Temperature Drying.
ACS Appl Mater Interfaces
September 2024
Department of Chemical Engineering, Pukyong National University, Busan 48513, Republic of Korea.
The development of n-type organic semiconductors (OSCs) has been lagged behind that of p-type OSCs, mainly due to the limited availability of the electron deficient π-conjugated backbones and facile electron trapping by ambient oxidants. Improving the performance of n-type OSCs through n-doping is essential for realizing p-n junction diodes and complementary circuits. Conventional vacuum deposition doping is costly and time-consuming, while solution doping risks thermal damage through necessary annealing.
View Article and Find Full Text PDFReal-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p-n Junction Photodiode with a Fast Responsive and High Rectification Ratio.
ACS Appl Mater Interfaces
July 2024
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea.
We introduce an enhanced performance organic-inorganic hybrid p-n junction photodiode, utilizing poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) and ZnO, fabricated through a solution-based process at a low temperature under 100 °C. Improved interfacial electronic structure, characterized by shallower Gaussian standard deviation of the density-of-state distribution and a larger interface dipole, has resulted in a remarkable fold increase of ∼10 in signal-to-noise ratio for the device. This photodiode exhibits a high specific detectivity (2.
View Article and Find Full Text PDFPhoto-Chemical Stimulation of Neurons with Organic Semiconductors.
Adv Sci (Weinh)
November 2023
Biological and Environmental Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
Recent advances in light-responsive materials enabled the development of devices that can wirelessly activate tissue with light. Here it is shown that solution-processed organic heterojunctions can stimulate the activity of primary neurons at low intensities of light via photochemical reactions. The p-type semiconducting polymer PDCBT and the n-type semiconducting small molecule ITIC (a non-fullerene acceptor) are coated on glass supports, forming a p-n junction with high photosensitivity.
View Article and Find Full Text PDFEnhanced Photoresponsivity UV-C Photodetectors Using a p-n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-GaO Microflake/MnO Quantum Dots.
ACS Appl Mater Interfaces
March 2023
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal23955-6900, Saudi Arabia.
Solar-blind self-powered UV-C photodetectors suffer from low performance, while heterostructure-based devices require complex fabrication and lack p-type wide band gap semiconductors (WBGSs) operating in the UV-C region (<290 nm). In this work, we mitigate the aforementioned issues by demonstrating a facile fabrication process for a high-responsivity solar-blind self-powered UV-C photodetector based on a p-n WBGS heterojunction structure, operating under ambient conditions. Here, heterojunction structures based on p-type and n-type ultra-wide band gap WBGSs (i.
View Article and Find Full Text PDFFluctuations at Metal Halide Perovskite Grain Boundaries Create Transient Trap States: Machine Learning Assisted Ab Initio Analysis.
ACS Appl Mater Interfaces
December 2022
Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States.
All-inorganic perovskites are promising candidates for solar energy and optoelectronic applications, despite their polycrystalline nature with a large density of grain boundaries (GBs) due to facile solution-processed fabrication. GBs exhibit complex atomistic structures undergoing slow rearrangements. By studying evolution of the Σ5(210) CsPbBr GB on a nanosecond time scale, comparable to charge carrier lifetimes, we demonstrate that GB deformations appear every ∼100 ps and increase significantly the probability of deep charge traps.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!