We report a large area terahertz detector utilizing a tunable plasmonic resonance in subwavelength graphene microribbons on SiC(0001) to increase the absorption efficiency. By tailoring the orientation of the graphene ribbons with respect to an array of subwavelength bimetallic electrodes, we achieve a condition in which the plasmonic mode can be efficiently excited by an incident wave polarized perpendicular to the electrode array, while the resulting photothermal voltage can be observed between the outermost electrodes.
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http://dx.doi.org/10.1021/acs.nanolett.5b00137 | DOI Listing |
Nanophotonics
September 2022
College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
High-performance terahertz wave detectors at room temperature are still urgently required for a wide range of applications. The available technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, complicated structure, and high noise equivalent power (NEP). Here, we have demonstrated a Weyl semimetal surface plasmon-enhanced high-performance terahertz wave detectors which are based on microdisk array deposited WTe nanofilm epitaxially grown on GaN substrate for room temperature operation.
View Article and Find Full Text PDFTerahertz emission by ultrafast excitation of semiconductor/metal interfaces was found strongly enhanced by plasmon resonance. Here, a three-dimensional nanoporous gold (NPG) was used to form semiconductor/metal compound with cadmium telluride (CdTe). We investigated the specific impact of surface plasmon from randomly nanoporous structure in the ultrafast optoelectronic response for THz generation, and observed a THz amplitude enhancement around an order of magnitude from CdTe on NPG compared to that from CdTe on silicon.
View Article and Find Full Text PDFLight Sci Appl
March 2021
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore, Singapore.
High-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation.
View Article and Find Full Text PDFPhotocurrent generation in low-temperature-grown GaAs (LT-GaAs) has been significantly improved by growing a thin AlAs isolation layer between the LT-GaAs layer and semi-insulating (SI)-GaAs substrate. The AlAs layer allows greater arsenic incorporation into the LT-GaAs layer, prevents current diffusion into the GaAs substrate, and provides optical back-reflection that enhances below bandgap terahertz generation. Our plasmon-enhanced LT-GaAs/AlAs photoconductive antennas provide 4.
View Article and Find Full Text PDFSci Rep
July 2017
Research Center for Applied Sciences, Academia Sinica, Taipei, 115, Taiwan.
In this work, the terahertz (THz) Smith-Purcell radiations (SPRs) for the relativistic electron bunch passing over an indium antimonide (InSb)-based substrate with a subwavelength grating under various temperatures of substrate are investigated by FDTD simulations and theoretical analyses. The explored SPR is locked and enhanced at a certain emission wavelength with the emission angle still following the wavelength-angle relation of the traditional SPR. This wavelength agrees with the (vacuum) wavelength of surface plasmons (SPs) at the air-InSb interface excited by the electron bunch.
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