https://eutils.ncbi.nlm.nih.gov/entrez/eutils/efetch.fcgi?db=pubmed&id=25852367&retmode=xml&tool=pubfacts&email=info@pubfacts.com&api_key=b8daa3ad693db53b1410957c26c9a51b4908https://eutils.ncbi.nlm.nih.gov/entrez/eutils/esearch.fcgi?db=pubmed&term=percolative+aluminum&datetype=edat&usehistory=y&retmax=5&tool=pubfacts&email=info@pubfacts.com&api_key=b8daa3ad693db53b1410957c26c9a51b4908https://eutils.ncbi.nlm.nih.gov/entrez/eutils/efetch.fcgi?db=pubmed&WebEnv=MCID_6795798b077edafa0109fd51&query_key=1&retmode=xml&retmax=5&tool=pubfacts&email=info@pubfacts.com&api_key=b8daa3ad693db53b1410957c26c9a51b4908 Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy. | LitMetric

Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy.

Nanoscale Res Lett

Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010 Taiwan.

Published: April 2015

We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385055PMC
http://dx.doi.org/10.1186/s11671-015-0782-xDOI Listing

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