AI Article Synopsis
- - The study investigates how thermal annealing at 380°C for various durations affects the 'cold' crystallization of a specific chalcogenide glass (80GeSe2-20Ga2Se3) using methods like X-ray diffraction and electron microscopy.
- - Results reveal that the thermal treatment leads to structural fragmentation, with larger free-volume entities breaking down into smaller ones, as indicated by changes in positron lifetime spectra.
- - The annealing process results in the formation of nanocrystallites primarily on the glass surface, particularly phases of Ga2Se3, GeGa4Se8, and GeSe2, along with the occurrence of nucleation and void accumulation in the initial stages.
Article Abstract
'Cold' crystallization in 80GeSe2-20Ga2Se3 chalcogenide glass nanostructurized due to thermal annealing at 380°C for 10, 25, 50, 80, and 100 h are probed with X-ray diffraction, atomic force, and scanning electron microscopy, as well as positron annihilation spectroscopy performed in positron annihilation lifetime and Doppler broadening of annihilation line modes. It is shown that changes in defect-related component in the fit of experimental positron lifetime spectra for nanocrystallized glasses testify in favor of structural fragmentation of larger free-volume entities into smaller ones. Nanocrystallites of Ga2Se3 and/or GeGa4Se8 phases and prevalent GeSe2 phase extracted mainly at the surface of thermally treated samples with preceding nucleation and void agglomeration in the initial stage of annealing are characteristic features of cold crystallization.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385280 | PMC |
| http://dx.doi.org/10.1186/s11671-015-0775-9 | DOI Listing |
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