High-power passively mode-locked Nd:YVO(4) laser using SWCNT saturable absorber fabricated by dip coating method.

Passive mode locked laser is typically achieved by the Semiconductor Saturable absorber Mirror, SESAM, saturable absorber, which is produced by expensive and complicated metal organic chemical vapor deposition method. Carbon based single wall carbon nanotube (SWCNT), saturable absorber, is a promising material which is capable to produce stable passive mode-locking in the high power laser cavity over a wide operational wavelength range. This study has successfully demonstrated the high power mode locking laser system operating at 1 micron by using SWCNT based absorbers fabricated by dip coating method. The proposed fabrication method is practical, simple and cost effective for fabricating SWCNT saturable absorber. The demonstrated high power Nd:YVO(4) mode-locked laser operating at 1064nm have maximum output power up to 2.7W,with the 167MHz repetition rate and 3.1 ps pulse duration, respectively. The calculated output pulse energy and peak power are 16.1nJ and 5.2kW, respectively.