Thermal and high speed modulation characteristics are investigated for a unidirectional-emission microdisk laser with a radius of 7 μm surrounded by BCB-cladding layer, with a threshold current of 1.5 mA at the temperature of 287 K. The lasing spectra under different widths of pulsed current are measured to characterize the temperature rise during the pulse period, and the thermal distribution in the microdisk laser is simulated by the finite-element modeling technique. A temperature rise of 25 K is estimated for the microdisk laser biased at 20 mA. Furthermore, small signal modulation response with 3dB bandwidth up to 20 GHz is obtained for the microdisk laser at the biasing current of 18 mA, and eye-diagrams at the modulation bit rates of 20, 25, and 30 GHz are also measured at the temperature of 287 K.
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http://dx.doi.org/10.1364/OE.23.002879 | DOI Listing |
Nanophotonics
July 2024
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
Nanophotonics
July 2024
KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea.
Despite their excellent performance and versatility, the efficient integration of small lasers with other optical devices has long been hindered by their broad emission divergence. In this study, we introduce a novel approach for emission engineering in microdisk lasers, significantly enhancing their vertical emission output by directly integrating specially designed reflective metalenses, referred to as "meta-micromirrors". A 5 μm-diameter microdisk laser is precisely positioned at an 8 μm focal distance on a 30 × 30 μm meta-micromirror featuring a numerical aperture (NA) of 0.
View Article and Find Full Text PDFNat Commun
December 2024
Peter Gruenberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, 52428, Juelich, Germany.
Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.
View Article and Find Full Text PDFTantalum pentoxide (TaO) is widely recognized as a promising material platform for photonic integration. This is primarily attributed to its exceptional properties including large bandgap of 3.8 eV, broad transparency window ranging from 300 nm to 8000 nm, high nonlinear refractive index of ∼7.
View Article and Find Full Text PDFHigh-quality microresonators can greatly enhance light-matter interactions and are excellent platforms for studying nonlinear optics. Wavelength conversion through nonlinear processes is the key to many applications of integrated optics. The stimulated Raman scattering (SRS) process can extend the emission wavelength of a laser source to a wider range.
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