InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1088/0957-4484/26/12/125201 | DOI Listing |
Publication Analysis
Top Keywords
ingan/gan light-emitting
8
light-emitting diode
8
diode structures
8
structures al-coated
8
al-coated gan
8
gan nanorods
8
bloch surface
4
surface plasmon
4
plasmon enhanced
4
enhanced blue
4
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!