Tunable metal/dielectric composites are promising candidates for a large number of potential applications in electronics, sensor technologies and optical devices. Here we systematically investigate the dielectric properties of Ag-nanoparticles embedded in the highly flexible elastomer poly-dimethylsiloxane (PDMS). As tuning parameter we use uniaxial and biaxial strain applied to the composite. We demonstrate that both static variations of the filling factor and applied strain lead to the same behavior, i.e., the filling factor of the composite can be tuned by application of strain. In this way the effective static permittivity εeff of the composite can be varied over a very large range. Once the Poisson's ratio of the composite is known, the strain dependent dielectric constant can be accurately described by effective medium theory without any additional free fit parameter up to metal filling factors close to the percolation threshold. It is demonstrated that, starting above the percolation threshold in the metallic phase, applying strain provides the possibility to cross the percolation threshold into the insulating region. The change of regime from conductive phase down to insulating follows the description given by percolation theory and can be actively controlled.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1039/c4nr06690a | DOI Listing |
Langmuir
January 2025
Applied Systems Analysis & Research, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States.
Salt formations have been explored for the permanent isolation of spent nuclear fuel based on their high thermal conductivity, self-healing nature, and low hydraulic permeability to brine flow. Vacancy defect concentrations in salt complicate fracture mechanics not driven by dislocation dynamics and can influence the resulting surface structure. Classical molecular dynamic simulations were used to simulate tensile testing of salt crystals (halite) with vacancy defect concentrations of up to 0.
View Article and Find Full Text PDFSci Rep
January 2025
National Research Centre, Geophysical Sciences Department, Geophysical Exploration Lab., Dokki, Cairo, Egypt.
RSC Adv
January 2025
Department of Life Science and Applied Chemistry, Graduate School of Engineering, Nagoya Institute of Technology Gokiso-cho, Showa-ku Nagoya Aichi Japan 466-8555
We recently proposed a concept of self-transformation from thermoplastic polyesters into vitrimers intermolecular bond exchange as the cross-linking reaction. Key was the use of polyesters bearing hydroxyl side groups, which were cross-linked without additional cross-linkers through intermolecular transesterification in the presence of a suitable catalyst. In our previous study, a linear polyester was synthesized as the starting polymer by reacting dithiol monomers containing ester bonds (2-SH) with diepoxy monomers (2-epoxy) a thiol-epoxy reaction, generating hydroxyl side groups along the polyester chain.
View Article and Find Full Text PDFJ Environ Manage
January 2025
Department of Civil and Environmental Engineering, Vanderbilt University, PMB 351826, Nashville, TN, 37235-1826, USA. Electronic address:
Increased usage of electric arc furnace (EAF) slags as soil amendments and surface aggregates raises concerns regarding heavy metal release. However, no standardized leaching characterization approach exists for EAF slags and other industrial materials. This study compares test results for three EAF slags using several testing approaches: (i) total content analysis, (ii) single-batch extractions (i.
View Article and Find Full Text PDFNanotechnology
January 2025
Chinese Academy of Sciences, Institute of Microelectronics, No.3, Beitucheng West Road, Chaoyang District, beijing, 100029, CHINA.
In this letter, we investigated the impact of percolation transport mechanisms on ferroelectric field effect transistor (FeFET) multi-value storage with Kinetic Monte-Carlo (KMC) simulation considering aspect ratio and temperature dependencies. It is found that the portion of the ferroelectric polarization, which dominated the threshold voltage shift of the FeFET, increases when aspect ratio of device decreases. Moreover, randomness of percolation path formation and variations of equivalent conductance can be suppressed, indicating mitigation of device-to-device variations and enhancement of separation of individual states.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!