A CN-free hydrocarbon fluorophore (Perylene-TPE) was synthesized as a new luminescent down-shifting (LDS) material. Its photophysical properties in both the solution state and the solid state were studied. The unity fluorescence quantum yield of Perylene-TPE observed in its solid state is considered to be from the characteristics of intramolecular energy transfer (IET) and restricted internal rotation (RIR). This is supported by the results from theoretical calculations and spectroscopic measurements. For the photovoltaic application of Perylene-TPE, a theoretical modeling study suggests that using the LDS film of Perylene-TPE may increase the output short circuit current density (Jsc) of a CdTe solar cell by 2.95%, enhance the spectral response of a CdTe solar cell at 400 nm by 41%, and shift the incident solar photon distribution from short-wavelength (<500 nm) to long-wavelength (>500 nm). Experimentally, placing a LDS film of Perylene-TPE on a CdTe solar cell can enhance its output Jsc by as high as 3.30 ± 0.31%, which is comparable to the current commercially available LDS material – Y083 (3.28% ± 0.37%).
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http://dx.doi.org/10.1039/c4pp00480a | DOI Listing |
ACS Appl Mater Interfaces
January 2025
National Renewable Energy Laboratory, Golden, Colorado 80401, United States.
Optimizing group-V doping and Se alloying are two main focuses for advancing CdTe photovoltaic technology. We report on nanometer-scale characterizations of microelectronic structures of phosphorus (P)-doped CdSeTe devices using a combination of two atomic force microscopy-based techniques, namely, Kelvin probe force microscopy (KPFM) and scanning spreading resistance microscopy (SSRM). KPFM on device cross-section images distribution of the potential drop across the device.
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December 2024
Advanced Membranes and Porous Materials Center, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.
Precise material design and surface engineering play a crucial role in enhancing the performance of optoelectronic devices. These efforts are undertaken to particularly control the optoelectronic properties and regulate charge carrier dynamics at the surface and interface. In this study, we used ultrafast scanning electron microscopy (USEM), which is a powerful and highly sensitive surface tool that provides unique information about the photoactive charge dynamics of material surfaces selectively and spontaneously in real time and space in high spatial and temporal resolution.
View Article and Find Full Text PDFHeliyon
November 2024
North South University, Dhaka, 1229, Bangladesh.
ACS Mater Au
November 2024
School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
Ion migration in semiconductor devices is facilitated by the presence of point defects and has a major influence on electronic and optical properties. It is important to understand and identify ways to mitigate photoinduced and electrically induced defect-mediated ion migration in semiconductors. In this Perspective, we discuss the fundamental mechanisms of defect-mediated ion migration and diffusion as understood through atomistic simulations.
View Article and Find Full Text PDFPhys Chem Chem Phys
November 2024
Materials Research and Simulation Lab, Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Kumira, Chittagong 4318, Bangladesh.
Potassium germanium chloride (KGeCl) has emerged as a promising contender for use as an absorber material for lead-free perovskite solar cells (PSCs), offering significant potential in this domain. In this study, we conducted a density functional theory (DFT) investigation to analyze and assess the structural, electronic, thermomechanical, and optical characteristics of the cubic KGeCl absorber. The positive phonon dispersion curve confirmed the dynamical stability of KGeCl.
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