A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1063/1.4904867 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Accurate operando measurement of AlGaN/GaN HEMTs channel temperature and optimization of thermal design.
Nanotechnology
January 2025
Electronic Sci.&Eng., Xi'an Jiaotong University, 28 Xianning West Road,Beilin District, Xi 'an, Shaanxi Province, China, Xi'an, 710049, CHINA.
The accurate estimation of the temperature distribution of the GaN based power devices and optimization of the device structure is of great significance to possibly solve the self-heating problem, which hinders the further enhancement of the device performances. We present here the operando temperature measurement with high spatial resolution using Raman spectroscopy of AlGaN/GaN high electron mobility transistors (HEMTs) with different device structures and explore the optimization of the device thermal design accordingly. The lateral and depth temperature distributions of the single-finger HEMT were characterized.
View Article and Find Full Text PDFInactivation of , and multidrug-resistant with dielectric barrier discharged cold atmospheric plasma: a comparative study with antimicrobial drugs.
J Med Microbiol
January 2025
Institute of Advanced Study in Science and Technology (IASST), Guwahati 781035, Assam, India.
Cold atmospheric plasma (CAP) has emerged as a promising technology for neutralizing microbes, including multidrug-resistant strains. This study investigates CAP's potential as an alternative to traditional antimicrobial drugs for microbial inactivation. In the era of increasing antimicrobial resistance, there is a persistent need for alternative antimicrobial strategies.
View Article and Find Full Text PDFSelective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H- Silicon Carbide.
ACS Nano
January 2025
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high-temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness, which makes complex micromachining difficult. Photoelectrochemical (PEC) etching is a simple, rapid means of wet processing SiC, including the use of dopant-selective etch stops that take advantage of the mature SiC homoepitaxy.
View Article and Find Full Text PDFGraphitic Carbon Nitride-Supported Layered Double Hydroxides (GCN@FeMg-LDH) for Efficient Water Splitting and Energy Harvesting.
ACS Appl Mater Interfaces
January 2025
Department of Environmental Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.
The advancement of highly efficient and cost-effective electrocatalysts for electrochemical water splitting, along with the development of triboelectric nanogenerators (TENGs), is crucial for sustainable energy generation and harvesting. In this study, a novel hybrid composite by integrating graphitic carbon nitride (GCN) with an earth-abundant FeMg-layered double hydroxide (LDH) (GCN@FeMg-LDH) was synthesized by the hydrothermal approach. Under controlled conditions, with optimized concentrations of metal ions and GCN, the fabricated electrode, GCN@FeMg-LDH demonstrated remarkably low overpotentials of 0.
View Article and Find Full Text PDFScanning Thermal Microscopy Method for Self-Heating in Nonlinear Devices and Application to Filamentary Resistive Random-Access Memory.
ACS Nano
January 2025
IBM Research Europe - Zurich, 8803 Rüschlikon, Switzerland.
Devices with a highly nonlinear resistance-voltage relationship are candidates for neuromorphic computing, which can be achieved by highly temperature dependent processes like ion migration. To explore the thermal properties of such devices, Scanning Thermal Microscopy (SThM) can be employed. However, due to the nonlinearity, the high resolution and quantitative method of AC-modulated SThM cannot readily be used.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!