Sputter deposition onto ionic liquids (ILs) was applied to synthesize AuCu bimetallic alloy nanoparticles (NPs) dispersed in 1-ethyl-3-methylimidazolium tetrafluoroborate (EMI-BF4). A mixed target of Au and Cu materials was used for simultaneous sputter deposition onto the IL under an Ar pressure of 10 Pa. Two types of heating procedures within the range of 323-573 K were examined for control of the structures of NPs, particularly addressing the phase transition of the alloy NPs from the face centered cubic (fcc) structure to the L1₀ structure. One was heating after the sputter deposition in N2 at atmospheric pressure for 1 h. Another was a combination of heating during the sputter deposition and subsequent heating under an Ar pressure from 0.5 to 0.8 Pa for 1 h. Although both cases exhibited lowering of the phase transition temperatures compared with the temperature for the bulk, the latter procedure at 423 K only provided the NPs (approx. 5 nm) consisting of the L1₀ structure in the dispersed manner. A mechanism for forming the L1₀ structure was proposed for explaining the difference between results obtained using the two procedures.
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http://dx.doi.org/10.1039/c4dt03557g | DOI Listing |
Chemistry
January 2025
Paderborn University: Universitat Paderborn, Technical and Macromolecular Chemistry, Warburger Str. 100, 33098, Paderborn, GERMANY.
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December 2024
Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China.
The MEMS gas sensor is one of the most promising gas sensors nowadays due to its advantage of small size, low power consumption, and easy integration. It has been widely applied in energy components, portable devices, smart living, etc. The performance of the gas sensor is largely determined by the sensing materials, as well as the fabrication methods.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
School of Integrated Circuit, Southeast University, Nanjing 210096, China.
Aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, a high dielectric constant, and good insulating properties, which are suitable for the field of resistive random access memory. AlN thin films were deposited on ITO substrate using the radio-frequency magnetron sputtering technique.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China.
Integrating nanocrystalline diamond (NCD) films on silicon chips has great practical significance and many potential applications, including high-power electronic devices, microelectromechanical systems, optoelectronic devices, and biosensors. In this study, we provide a solution for ensuring heterogeneous interface integration between silicon (Si) chips and NCD films using low-temperature bonding technology. This paper details the design and implementation of a magnetron sputtering layer on an NCD surface, as well as the materials and process for the connection layer of the integrated interface.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
In recent years, the fabrication of materials with large nonlinear optical coefficients and the investigation of methods to enhance nonlinear optical performance have been in the spotlight. Herein, the bismuth telluride (BiTe) thin films were prepared by radio-frequency magnetron sputtering and annealed in vacuum at various temperatures. The structural and optical properties were characterized and analyzed using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and UV/VIS/NIR spectrophotometry.
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