Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27109, USA.
Published: April 2015
AI Article Synopsis
Article Abstract
Highly-flexible thermoelectric fabrics were fabricated based on a layered structure, composed of a thin active layer of self-assembled tellurium nanorods and a substrate layer of polyvinylidene fluoride. The resulting thermoelectric fabrics show a high room temperature power factor of 45.8 μW m(-1) K(-2), which opens a new avenue to fabricate highly-flexible sustainable energy sources.
Unique thermoelectric properties of low-cost, widely available conducting polymers and multi-layered graphite structures have motivated the development of flexible thermoelectric generators using screen printing for low-temperature applications. Composites of polyaniline and graphite in different ratios with one weight percentage of bismuth telluride were prepared to fabricate flexible thermoelectric generators. The performance of the devices showed that the addition of graphite to polyaniline reduced the band gap energy from 2.
The development of highly integrated electronic components and the Internet of Things demands efficient thermal management and uninterrupted energy harvesting, which provides exciting opportunities for thermoelectric (TE) technology since it allows direct conversion between electricity and thermal energy. The improved output performance of TE devices has traditionally been driven by advancements in inorganic materials. Recently, there has been growing interest in studying substrate-free inorganic-based TE thin films because they provide improved adherence to curved surfaces and offer a more compact size compared to the corresponding rigid form of these materials.
We investigate a method for fabricating layers that exhibit both high optical absorption and promising thermoelectric properties. Using plasma-enhanced chemical vapor deposition (PECVD), amorphous Si and SiGe layers are deposited on glass substrates and subsequently processed via laser annealing to achieve nanostructured layers. Our results show that a single laser annealing pulse at 40 mJ yields the highest power factor, approximately 90 μW/m·K.
State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou 310058, China.
Silicon photonics with the advantages of low power consumption and low fabrication cost is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband operation, high speed, and low integration cost can be good additions to the SiGe photodetectors, supporting high-speed photodetection in wavelength bands beyond 1.6 μm on silicon.
Wearable thermoelectric (TE)-based temperature sensors capable of detecting and transmitting temperature data from the human body and environment show promise in intelligent medical systems, human-machine interfaces, and electronic skins. However, it has remained a challenge to fabricate the flexible temperature sensors with superior sensing performance, primarily due to the low Seebeck coefficient of the TE materials. Here, we report an inorganic amorphous TE material, GeAsTe, with a high Seebeck coefficient of 1050 μV/K, which is around 3 times higher than the organic TE materials and 2 times higher than the inorganic crystal TE materials.
