We present a silicon wire grid polarizer operating down to a wavelength of 300 nm. Besides metallic grating materials, semiconductors also offer appropriate material properties to realize wire grid polarizers in the ultraviolet (UV) spectral range. The presented polarizer with a period of 140 nm was realized by means of electron beam lithography and dry etching using amorphous silicon as the grating material. At a wavelength of 365 nm, a transmission of 42% and an extinction ratio of 90 (19.5 dB) are measured. The spectral bandwidth of these polarizers in the UV-spectral range is about 100 nm.
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