We fabricated a phosphor-conversion white light emitting diode (PC-WLED) using a thin-film flip-chip GaN LED with a roughened u-GaN surface (TFFC-SR-LED) that emits blue light at 450 nm wavelength with a conformal phosphor coating that converts the blue light into yellow light. It was found that the TFFC-SR-LED with the thin-film substrate removal process and surface roughening exhibits a power enhancement of 16.1% when compared with the TFFC-LED without a sapphire substrate. When a TFFC-SR-LED with phosphors on a Cu-metal packaging-base (TFFC-SR-Cu-WLED) was operated at a forward-bias current of 350 mA, luminous flux and luminous efficacy were increased by 17.8 and 11.9%, compared to a TFFC-SR-LED on a Cup-shaped packaging-base (TFFC-SR-Cup-WLED). The angular correlated color temperature (CCT) deviation of a TFFC-SR-Cu-WLED reaches 77 K in the range of -70° to + 70° when the average CCT of white LEDs is around 4300 K. Consequently, the TFFC-SR-LED in a conformal coating phosphor structure on a Cu packaging-base could not only increase the luminous flux output, but also improve the angular-dependent CCT uniformity, thereby reducing the yellow ring effect.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1364/OE.22.031646 | DOI Listing |
Sensors (Basel)
January 2025
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Short-wave infrared (SWIR) imaging has a wide range of applications in civil and military fields. Over the past two decades, significant efforts have been devoted to developing high-resolution, high-sensitivity, and cost-effective SWIR sensors covering the spectral range from 0.9 μm to 3 μm.
View Article and Find Full Text PDFTo further enhance the performance of GaN-based thin-film flip-chip light-emitting diodes (TFFC-LEDs), we designed and fabricated two sets of high-power blue chips with conventional and reflective current-blocking layers (CBL) The conventional CBL is composed of SiO, whereas the reflective CBL consists of SiO and a distributed Bragg reflector (DBR). We systematically characterized their optoelectronic performance. The results indicate that at an injection current of 350 mA, the light output power (LOP) and external quantum efficiency (EQE) of the TFFC-LEDs with a reflective CBL increased by 4.
View Article and Find Full Text PDFACS Nano
November 2024
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
Spin-helical Dirac Fermions at a doped topological insulator's boundaries can support Majorana quasiparticles when coupled with -wave superconductors, but in -doped systems, the requisite induced Cooper pairing in topological states is often buried at heterointerfaces or complicated by degenerate coupling with bulk conduction carriers. Rarely probed are -doped topological structures with nondegenerate Dirac and bulk valence bands at the Fermi level, which may foster long-range superconductivity without sacrificing Majorana physics. Using ultrahigh-resolution photoemission, we report proximity pairing with a large decay length in -doped topological SbTe on superconducting Nb.
View Article and Find Full Text PDFMicrosyst Nanoeng
September 2024
Department of Electrical Engineering, Yale University, New Haven, CT, 06511, USA.
The demand for high-performance electromechanical resonators is ever-growing across diverse applications, ranging from sensing and time-keeping to advanced communication devices. Among the electromechanical materials being explored, thin-film lithium niobate stands out due to its strong piezoelectric properties and low acoustic loss. However, in nearly all existing lithium niobate electromechanical devices, the configuration is such that the electrodes are in direct contact with the mechanical resonator.
View Article and Find Full Text PDFMicrosyst Nanoeng
July 2024
State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University, Xi'an, 710049 China.
Hydraulic technology with smaller sizes and higher reliability trends, including fault prediction and intelligent control, requires high-performance temperature and pressure-integrated sensors. Current designs rely on planar wafer- or chip-level integration, which is limited by pressure range, chip size, and low reliability. We propose a small-size temperature/high-pressure integrated sensor via the flip-chip technique.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!