Photo-assisted one-step electrodeposition has been applied to help in forming smooth and dense CuInSe2 films. The difference in surface morphology and crystalline quality between CuInSe2 films with various photo-assistance has been investigated. In the photo-assisted electrodeposition process, the many kinds of lamps providing maximum light intensity at about 380 to 620 nm were used as light source to be irradiated onto the surface of Mo-coated soda-lime glass substrates. The results suggested effects of photo-assistance including activating surface diffusion and growing high-crystalline quality films with reduced defects during electrodeposition.
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http://dx.doi.org/10.1186/1556-276X-9-660 | DOI Listing |
Materials (Basel)
August 2024
Wright Center for Photovoltaics Innovation & Commercialization, Department of Physics & Astronomy, University of Toledo, Toledo, OH 43606, USA.
Flux calibrations in multi-source thermal co-evaporation of thin films have been developed based on real-time spectroscopic ellipsometry (RTSE) measurements. This methodology has been applied to fabricate CuInSe (CIS) thin film photovoltaic (PV) absorbers, as an illustrative example, and their properties as functions of deposition rate have been studied. In this example, multiple Cu layers are deposited step-wise onto the same Si wafer substrate at different Cu evaporation source temperatures ().
View Article and Find Full Text PDFACS Omega
December 2023
Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
Solution-processed CuInSe films have generally relied on sulfide or sulfoselenide precursor films that, during the grain growth process, hamper the growth of thicker films and lead to the formation of a fine-grain layer. However, recent research has indicated that sulfur reduction in the precursor film modifies the grain growth mechanism and may enable the fabrication of thicker absorbers that are free of any fine-grain layer. In this work, we pursue direct solution deposition of sulfur-free CuInSe films from the molecular precursor approach.
View Article and Find Full Text PDFHeliyon
August 2023
Instituto de diseño y Fabricación (IDF), Universitat Politécnica de València (UPV), Spain.
Herein, copper indium diselenide ternary (CuInSe) thin film has been deposited on Indium Tin Oxide (ITO) coated glass substrate by electrochemical deposition technique with different potential and pH solutions. CuInSe thin films were deposited by one-step electrodeposition before post-depot selenization at 450 °C for 30 min. The effect of potential and pH on the structural and optical properties of CuInSe thin film have been studied using X-ray diffraction (XRD), Scanning electron microscopy (SEM), and UV-Visible spectrometer.
View Article and Find Full Text PDFSci Rep
August 2022
Department of Physics, Sharif University of Technology, Tehran, 14588, Iran.
In this paper, the properties of CuInSe (CISe) films deposited on three transparent substrates (FTO, FTO/NiO, FTO/MoO) are studied. These substrates might be used for bifacial solar cells, in place of the conventional glass/Mo substrates. CISe layers are deposited by spray pyrolysis followed by a selenization process.
View Article and Find Full Text PDFACS Appl Mater Interfaces
February 2022
Laboratory for Photovoltaics, Department of Physics and Materials Science, University of Luxembourg, Belvaux L-4422, Luxembourg.
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