This study investigated the interpretation of the logical words 'some' and 'every…or…' in 4-15-year-old high-functioning Mandarin-speaking children with autism spectrum disorders (ASD). Children with ASD performed similarly to typical controls in demonstrating semantic knowledge of simple sentences with 'some', and they had delayed knowledge of the complex sentences with 'every…or…'. Interestingly, the children with ASD had pragmatic knowledge of the scalar implicatures of these logical words, parallel to those of the typical controls. Taken together, the interpretation of logical words may be a relative strength in children with ASD. It is possible that some aspects of semantics and pragmatics may be selectively spared in ASD, due to the contribution the language faculty makes to language acquisition in the ASD population.
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http://dx.doi.org/10.1007/s10803-014-2350-0 | DOI Listing |
BMC Med Educ
January 2025
Laboratorio de Inmunofarmacología, Instituto Nacional de Enfermedades Respiratorias, Calzada de Tlalpan 4502, Colonia Sección XVI, CP 14080, Mexico, México.
Background: The field of health sciences is constantly evolving, presenting significant challenges to student learning performance. Therefore, it is crucial to identify the factors influencing students' learning style preferences, as these relate to how they acquire, understand, interpret, organize, and process information from their courses. In this study, we evaluated whether there is a relationship between students' learning style preferences and their learning gains.
View Article and Find Full Text PDFSci Rep
January 2025
School of Mathematics and Computer Science, Tongling University, Tongling, 244061, China.
The application of artificial neural networks (ANNs) can be found in numerous fields, including image and speech recognition, natural language processing, and autonomous vehicles. As well, intrusion detection, the subject of this paper, relies heavily on it. Different intrusion detection models have been constructed using ANNs.
View Article and Find Full Text PDFAccid Anal Prev
January 2025
Department of Computer Engineering, Hongik University, Seoul, 04066, Republic of Korea. Electronic address:
Automated Vehicles (AVs) are on the cusp of commercialization, prompting global governments to organize the forthcoming mobility phase. However, the advancement of technology alone cannot guarantee the successful commercialization of AVs without insights into the accidents on the read roads where Human-driven Vehicles (HV) coexist. To address such an issue, The New Car Assessment Program (NCAP) is currently in progress, and scenario-based approaches have been spotlighted.
View Article and Find Full Text PDFSensors (Basel)
December 2024
Institute of Autmatic Control, University of Kaiserslautern-Landau, 67653 Kaiserslautern, Germany.
Harsh operating conditions imposed by vehicular applications significantly limit the utilization of proton exchange membrane fuel cells (PEMFCs) in electric propulsion systems. Improper/poor management and supervision of rapidly varying current demands can lead to undesired electrochemical reactions and critical cell failures. Among other failures, flooding and catalytic degradation are failure mechanisms that directly impact the composition of the membrane electrode assembly and can cause irreversible cell performance deterioration.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Department of Computer Engineering, Modeling, Electronics, and Systems Engineering, University of Calabria, 87036 Rende, Italy.
This paper presents Cryo-SIMPLY, a reliable smart material implication (SIMPLY) operating at cryogenic conditions (77 K). The assessment considers SIMPLY schemes based on spin-transfer torque magnetic random access memory (STT-MRAM) technology with single-barrier magnetic tunnel junction (SMTJ) and double-barrier magnetic tunnel junction (DMTJ). Our study relies on a temperature-aware macrospin-based Verilog-A compact model for MTJ devices and a 65 nm commercial process design kit (PDK) calibrated down to 77 K under silicon measurements.
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