Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/nn505227q | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
A perfect ultra-wideband solar absorber with a multilayer stacked structure of Ti-SiO-GaAs: structure and outstanding characteristics.
Dalton Trans
December 2024
School of Physics and Electronic-Information Engineering, Hubei Engineering University, Xiaogan 432000, China.
In this paper, we introduce an entirely new solar absorber design-a multi-layer periodic stacked structure. Through coupling effects, this design has perfect ultra-wideband absorption characteristics. The absorber structure is composed of four absorption units with varying cycle lengths, which are cyclically stacked on the surface of the refractory metal Cr.
View Article and Find Full Text PDFNovel octa-graphene-like structures based on GaP and GaAs.
J Mol Model
June 2023
Modeling and Molecular Simulation Group, São Paulo State University (Unesp), Bauru, SP, 17033-360, Brazil.
Context: The discovery of graphene gave way to the search for new two-dimensional structures. In this regard, octa-graphene is a carbon allotrope consisting of 4- and 8-membered rings in a single planar sheet, drawing the research community's attention to study their inorganic analogs. Considering the promising properties of octa-graphene-like structures and the role of GaAs and GaP in semiconductor physics, this study aims to propose, for the first time, two novel inorganics buckled nanosheets based on the octa-graphene structure, the octa-GaAs and octa-GaP.
View Article and Find Full Text PDFCompact modeling of quantum confinements in nanoscale gate-all-around MOSFETs.
Fundam Res
September 2024
School of Integrated Circuits, Peking University, Beijing 100871, China.
In this work, a surface-potential based compact model focusing on the quantum confinement effects of ultimately scaled gate-all-around (GAA) MOSFET is presented. Energy quantization with sub-band formation along the radius direction of cylindrical GAAs or thickness direction of nanosheet GAAs leads to significant quantization effects. An analytical model of surface potentials is developed by solving the Poisson equation with incorporating sub-band effects.
View Article and Find Full Text PDFSelf-driven SnSSe alloy/GaAs heterostructure based unique polarization sensitive photodetectors.
Nanoscale
September 2021
Institute of Semiconductors, South China Normal University, Guangzhou, 510631, Guangdong, P. R. China.
With the fast development of semiconductor technology, self-driven devices have become an indispensable part of modern electronic and optoelectronic components. In this field, in addition to traditional Schottky and p-n junction devices, hybrid 2D/3D semiconductor heterostructures provide an alternative platform for optoelectronic applications. Herein we report the growth of 2D SnSSe ( = 0, 0.
View Article and Find Full Text PDFHigh-quality epitaxial wurtzite structured InAs nanosheets grown in MBE.
Nanoscale
January 2020
Materials Engineering, The University of Queensland, St Lucia, Queensland 4072, Australia and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia, Queensland 4072, Australia.
In this study, we have grown epitaxial wurtzite structured InAs nanosheets using Au catalysts on a GaAs{111} substrate by molecular beam epitaxy. Through detailed electron microscopy characterization studies on grown nanosheets, it was found that these wurtzite structured InAs nanosheets grew epitaxially on the GaAs{111} substrate, with {0001[combining macron]} catalyst/nanosheet interfaces and extensive {112[combining macron]0} surfaces. It was anticipated that the epitaxially grown InAs nanosheet can be triggered by a high supersaturation in catalysts, leading to an inclined growth leaving the substrate surface, and driven by the small lattice mismatch between the nanosheets and the substrate, with the orientation relationship of (0001[combining macron])//(112[combining macron]).
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!