Enhancing magnetic ordering in Cr-doped Bi2Se3 using high-TC ferrimagnetic insulator.

Nano Lett

York-Nanjing Joint Center for Spintronics and Nano Engineering (YNJC), School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China.

Published: January 2015

AI Article Synopsis

  • - The study investigates the enhancement of magnetic ordering in a specific topological insulator, Bi(2-x)Cr(x)Se(3), by using a ferrimagnetic insulator, Y(3)Fe(5)O(12), through a process known as the proximity effect.
  • - Researchers utilized elemental specific X-ray magnetic circular dichroism (XMCD) techniques to confirm a notable increase in the Curie temperature (TC) to 50 K in the heterostructure formed by the magnetic topological insulator and ferrimagnetic insulator.
  • - The findings also indicate a unique interaction mechanism reflected by a larger penetration depth of 6.6 nm at 30 K, which decreases significantly by 80

Article Abstract

We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi(2-x)Cr(x)Se(3), via the proximity effect using a high-TC ferrimagnetic insulator Y(3)Fe(5)O(12). The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.

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Source
http://dx.doi.org/10.1021/nl504480gDOI Listing

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