AI Article Synopsis
- The study revisits the concept of the spin-injected field effect transistor (spin-FET) using a lattice model and the recursive lattice Green's function approach to analyze its behavior.
- Results from one-dimensional simulations show significant differences from the traditional Datta-Das model, leading to an enhanced understanding of spin-FET functioning.
- The research also explores the impacts of inelastic scattering and lateral confinement on spin control, highlighting their importance for the performance of spin-FET devices.
Article Abstract
We revisit the spin-injected field effect transistor (spin-FET) in a framework of the lattice model by applying the recursive lattice Green's function approach. In the one-dimensional case the results of simulations in coherent regime reveal noticeable differences from the celebrated Datta-Das model, which lead us to an improved treatment with generalized result. The simulations also allow us to address inelastic scattering and lateral confinement effects in the control of spins. These issues are very important in the spin-FET device.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5378946 | PMC |
| http://dx.doi.org/10.1038/srep07527 | DOI Listing |
Publication Analysis
Top Keywords
inelastic scattering
8
scattering lateral
8
revisit spin-fet
4
spin-fet multiple
4
multiple reflection
4
reflection inelastic
4
lateral size
4
size effects
4
effects revisit
4
revisit spin-injected
4
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!