Using femtosecond time-resolved photoelectron spectroscopy we demonstrate that photoexcitation transforms monoclinic VO2 quasi-instantaneously into a metal. Thereby, we exclude an 80 fs structural bottleneck for the photoinduced electronic phase transition of VO2. First-principles many-body perturbation theory calculations reveal a high sensitivity of the VO2 band gap to variations of the dynamically screened Coulomb interaction, supporting a fully electronically driven isostructural insulator-to-metal transition. We thus conclude that the ultrafast band structure renormalization is caused by photoexcitation of carriers from localized V 3d valence states, strongly changing the screening before significant hot-carrier relaxation or ionic motion has occurred.
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http://dx.doi.org/10.1103/PhysRevLett.113.216401 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Institute of New Energy Technology, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China.
Trigonal selenium (t-Se) is a promising wide-band-gap photovoltaic material with a high absorption coefficient, abundant resources, simple composition, nontoxicity, and a low melting point, making it suitable for absorbers in advanced indoor and tandem photovoltaic applications. However, severe electrical losses at the rear interface of the t-Se absorber, caused by work function and lattice mismatches, limit the voltage output and overall performance. In this study, a strategy to enhance carrier transport and collection by modifying interfacial chemical interactions is proposed.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Conjugated polymer donors have always been one of the important components of organic solar cells (OSCs), particularly those featuring simple synthetic routes, proper energy levels, and appropriate aggregation behavior. In this work, we employed a nonfused electron-deficient building block, dicyanobithiophene (2CT), for constructing high-performance donors. Combining this with side-chain engineering, two novel halogen-free polymer donors, PB2CT-BO and PB2CT-HD, were reported.
View Article and Find Full Text PDFJ Phys Chem C Nanomater Interfaces
January 2025
Institute de Quimica Computacional i Catálisi, Universitat de Girona, Girona 17003 Spain.
Creating sustainable and stable semiconductors for energy conversion via catalysis, such as water splitting and carbon dioxide reduction, is a major challenge in modern materials chemistry, propelled by the limited and dwindling reserves of platinum group metals. Two-dimensional hexagonal borocarbonitride (h-BCN) is a metal-free alternative and ternary semiconductor, possessing tunable electronic properties between that of hexagonal boron nitride (h-BN) and graphene, and has attracted significant attention as a nonmetallic catalyst for a host of technologically relevant chemical reactions. Herein, we use density functional theory to investigate the stability and optoelectronic properties of phase-separated monolayer h-BCN structures, varying carbon concentration and domain size.
View Article and Find Full Text PDFHeliyon
January 2025
Advanced Materials Research Laboratory, Department of Physics, Faculty of Science, University of Tabuk, Tabuk, Saudi Arabia.
Herein, we report the biosynthesis of pure NiO and NiO nanoparticles doped with Silver (Ag@NiO NPs) 2, 4, 6, and 8 mol% from aloe vera extract by solution combustion method at 400 °C and calcined at 500 °C for 3 h. By utilizing silver-doped NiO nanoparticles synthesized with Aloe Vera latex, which not only enhances the material's properties but also promotes environmentally friendly fabrication methods. The morphological, structural elemental compositions were analysed through SEM, HRTEM, SAED, XRD and EDAX.
View Article and Find Full Text PDFNano Lett
January 2025
University of Washington, Physics Department, Seattle, Washington 98105, United States.
The charge state of a quantum point defect in a solid-state host strongly determines its optical and spin characteristics. Consequently, techniques for controlling the charge state are required to realize technologies for quantum networking and sensing. In this work, we demonstrate the use of deep-ultraviolet (DUV) radiation to dynamically neutralize nitrogen- (NV) and silicon-vacancy (SiV) centers.
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