Isolated electron spins in silicon carbide with millisecond coherence times.

Nat Mater

1] Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA [2] Department of Physics, University of California, Santa Barbara, California 93106, USA.

Published: February 2015

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because certain SiC defects have electronic states with sharp optical and spin transitions, they are increasingly recognized as a platform for quantum information and nanoscale sensing. Here, we show that individual electron spins in high-purity monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence times, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route towards wafer-scale quantum technologies.

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http://dx.doi.org/10.1038/nmat4144DOI Listing

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