Previous measurements of the electronic conductance of DNA nucleotides or amino acids have used tunnel junctions in which the gap is mechanically adjusted, such as scanning tunneling microscopes or mechanically controllable break junctions. Fixed-junction devices have, at best, detected the passage of whole DNA molecules without yielding chemical information. Here, we report on a layered tunnel junction in which the tunnel gap is defined by a dielectric layer, deposited by atomic layer deposition. Reactive ion etching is used to drill a hole through the layers so that the tunnel junction can be exposed to molecules in solution. When the metal electrodes are functionalized with recognition molecules that capture DNA nucleotides via hydrogen bonds, the identities of the individual nucleotides are revealed by characteristic features of the fluctuating tunnel current associated with single-molecule binding events.
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http://dx.doi.org/10.1021/nn505356g | DOI Listing |
Nat Commun
January 2025
CNR Nanotec, Institute of Nanotechnology, via Monteroni, 73100, Lecce, Italy.
Macroscopic coherence in quantum fluids allows the observation of interference effects in their wavefunctions, and enables applications such as superconducting quantum interference devices based on Josephson tunneling. The Josephson effect manifests in both fermionic and bosonic systems, and has been well studied in superfluid helium and atomic Bose-Einstein condensates. In exciton-polariton condensates-that offer a path to integrated semiconductor platforms-creating weak links in ring geometries has so far remained challenging.
View Article and Find Full Text PDFACS Nano
January 2025
School of Chemistry, Beihang University, Beijing 100191, China.
Two-dimensional (2D) ferromagnetic materials are subjects of intense research owing to their intriguing physicochemical properties, which hold great potential for fundamental research and spintronic applications. Specifically, 2D van der Waals (vdW) ferromagnetic materials retain both structural integrity and chemical stability even at the monolayer level. Moreover, due to their atomic thickness, these materials can be easily manipulated by stacking them with other 2D vdW ferroic and nonferroic materials, enabling precise control over their physical properties and expanding their functional applications.
View Article and Find Full Text PDFAdv Mater
January 2025
Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa, 252-5258, Japan.
Twistronics, a novel engineering approach involving the alignment of van der Waals (vdW) integrated two-dimensional materials at specific angles, has recently attracted significant attention. Novel nontrivial phenomena have been demonstrated in twisted vdW junctions (the so-called magic angle), such as unconventional superconductivity, topological phases, and magnetism. However, there have been only few reports on integrated vdW layers with large twist angles θ, such as twisted interfacial Josephson junctions using high-temperature superconductors.
View Article and Find Full Text PDFSci Rep
January 2025
College of Science, Xuchang University, Xuchang, 461000, China.
Spin and valley polarizations (P and P) and tunneling magnetoresistance (TMR) are demonstrated in the ferromagnetic/barrier/normal/barrier/ferromagnetic WSe junction, with the gate voltage and off-resonant circularly polarized light (CPL) applied to the two barrier regions. The minimum incident energy of non-zero spin- and valley-resolved conductance has been derived, which is consistent with numerical calculations and depends on the electric potential U, CPL intensity ΔΩ, exchange field h, and magnetization configuration: parallel (P) or antiparallel (AP). For the P (AP) configuration, the energy region with P = -1 or P = 1 is wider (narrower) and increases with ΔΩ.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
Max Planck Institute for Microstructure Physics, Halle (Saale), Germany.
Magnetic random-access memory that uses magnetic tunnel junction memory cells is a high-performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today, its speed is limited by the high magnetization of the memory storage layer. Here we prepare magnetic tunnel junction memory devices with a low magnetization ferrimagnetic Heusler alloy MnGe as the memory storage layer on technologically relevant amorphous substrates using a combination of a nitride seed layer and a chemical templating layer.
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