AI Article Synopsis
- - Hexagonal-phase single-crystal Gd2 O3 is grown on GaN using molecular beam epitaxy, showing a dielectric constant that is roughly double that of its cubic version when placed on InGaAs or Si.
- - The capacitive effective thickness of 0.5 nm in hexagonal Gd2 O3 represents one of the lowest values for GaN-metal-oxide-semiconductor devices.
- - The created heterostructure is thermodynamically stable at high temperatures and maintains low interfacial densities of states even after undergoing high-temperature annealing.
Article Abstract
Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagonal Gd2 O3 is perhaps the lowest on GaN-metal-oxide-semiconductor devices. The heterostructure is thermo dynamically stable at high temperatures and exhibits low interfacial densities of states after high-temperature annealing.
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| http://dx.doi.org/10.1002/adma.200902101 | DOI Listing |
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