The effect of coherent single frequency injection on two-section semiconductor lasers is studied numerically using a model based on a set of delay differential equations. The existence of bistability between different continuous-wave and nonstationary regimes of operation is demonstrated in the case of sufficiently large linewidth enhancement factors.
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http://dx.doi.org/10.1103/PhysRevE.89.052903 | DOI Listing |
Sensors (Basel)
December 2024
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
We observed tunable characteristics of optical frequency combs (OFCs) generated from InGaAs/GaAs double quantum wells (DQWs) asymmetric waveguide two-section mode-locked lasers (TS-MLLs). This involves an asymmetric waveguide mode-locked semiconductor laser (AWML-SL) operating at a center wavelength of net modal gain of approximately 1.06 µm, which indicates a stable pulse shape, with the power-current(P-I) characteristic curve revealing a small difference between forward and reverse drive currents in the gain region.
View Article and Find Full Text PDFNanophotonics
April 2024
Institute of Solid State Electronics, TU Wien, Gusshausstrasse 25-25a, 1040 Vienna, Austria.
Micromachines (Basel)
October 2023
College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China.
A novel high-speed directly modulated two-section distributed-feedback (TS-DFB) semiconductor laser based on the detuned-loading effect is proposed and simulated. A grating structure is designed by the reconstruction-equivalent-chirp (REC) technique. A π phase shift is introduced into the reflection grating, which can provide a narrow-band reflection region with a sharp falling slope on both sides of the reflection spectrum, thus enhancing the detuned-loading effect.
View Article and Find Full Text PDFMicromachines (Basel)
November 2022
School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China.
A highly integrated multi-mode multi-band (MMMB) power amplifier module (PAM) using hybrid bulk complementary metal oxide semiconductor (CMOS), gallium arsenide (GaAs) heterojunction bipolar transistor (HBT), and silicon-on-insulator (SOI) technologies for low band (LB, 824-915 MHz) and high band (HB, 1710-1980 MHz) is proposed. The hybrid MMMB PAM integrates a bulk CMOS controller die, a GaAs HBT power amplifier (PA) die and a SOI switch die on a six-layer laminate. To simultaneously obtain both highly efficient and highly linear characteristics over a wide range of input power levels, a parallel dual-chain PA strategy has been adopted to provide vary bias current and gain for low-power mode (LPM) and high-power mode (HPM) operation.
View Article and Find Full Text PDFSci Rep
March 2022
Temasek Laboratories@NTU (TL@NTU), Nanyang Technological University, 50 Nanyang Drive, Singapore, 637553, Singapore.
Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstrated.
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