Room temperature synthesis of Bi25FeO39 and hydrothermal kinetic relations between sillenite- and distorted perovskite-type bismuth ferrites.

Dalton Trans

IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Department of Physics and Astronomy, Faculty of Sciences, University of Porto, 4169-007 Porto, Portugal.

Published: December 2014

The time-dependent study at mild hydrothermal conditions revealed the kinetic relation between structurally unrelated bismuth ferrites. We report the synthetic conditions that disclose the in situ transformation of Bi25FeO39 into BiFeO3 by only extending the time for crystallization. We also demonstrate how a careful investigation of the early stages of multiferroics crystallization provides cheap and easy room-temperature access to the important sillenite-type of structure of Bi25FeO39. The crystal structure analysis by the Rietveld method and magnetization measurements provided detailed structure and magnetic relations between the synthesis conditions and the properties of the run product. The BiFeO3 antiferromagnetic behavior with a small ferromagnetic component arising from the particle's surface uncompensated spins is ascertained.

Download full-text PDF

Source
http://dx.doi.org/10.1039/c4dt01825gDOI Listing

Publication Analysis

Top Keywords

bismuth ferrites
8
room temperature
4
temperature synthesis
4
synthesis bi25feo39
4
bi25feo39 hydrothermal
4
hydrothermal kinetic
4
kinetic relations
4
relations sillenite-
4
sillenite- distorted
4
distorted perovskite-type
4

Similar Publications

Self-Poled Bismuth Ferrite Thin Film Micromachined for Piezoelectric Ultrasound Transducers.

Adv Mater

December 2024

Institute for Superconducting and Electronic Materials, Faculty of Engineering and Information Sciences, University of Wollongong, Innovation Campus, North Wollongong, NSW, 2500, Australia.

Piezoelectric micromachined ultrasound transducers (pMUTs), especially those using lead-free materials, are crucial next-generation microdevices for precise actuation and sensing, driving advancements in medical, industrial, and environmental applications. Bismuth ferrite (BiFeO) is emerging as a promising lead-free piezoelectric material to replace Pb(Zr,Ti)O in pMUTs. Despite its potential, the integration of BiFeO thin films into pMUTs has been hindered by poling issues.

View Article and Find Full Text PDF

Domain walls are quasi-one-dimensional topological defects in ferroic materials, which can harbor emergent functionalities. In the case of ferroelectric domain wall (FEDW) devices, an exciting frontier has emerged: memristor-based information storage and processing approaches. Memristor solid-state FEDW devices presented thus far, however predominantly utilize a complex network of domain walls to achieve the desired regulation of density and charge state.

View Article and Find Full Text PDF

Nanostructured bismuth ferrite (BiFeO) single-phase nanoparticles with 76.2% crystallinity and 100% perovskite structure were synthesized using a co-precipitation method. The X-ray diffraction pattern confirmed the perovskite structure of BFO, and Rietveld refinement demonstrated the presence of a triclinic structure with the 1 space group.

View Article and Find Full Text PDF

Cancer, kidney and liver damage, and even death result from water contaminated with textile dyes. This study highlighted a key approach for treating water contaminated with methylene blue (MB) dye. Bismuth-doped ferrite nanoparticles (NiZnCoBiFeO) with 0 ≤  ×  ≤ 0.

View Article and Find Full Text PDF

Tuning Self-Polarization of Epitaxial BiFeO Thin Films through Interface Effects.

ACS Appl Mater Interfaces

December 2024

Intelligent Materials Lab, School of Physics and Materials Science, Nanchang University, Nanchang 330031, People's Republic of China.

Interface effects and strain engineering have emerged as critical strategies for modulating polarization and internal electric fields in ferroelectric materials, playing a vital role in exploring coupling mechanisms and developing ferroelectric diode devices. In this study, we selected BiFeO as a representative ferroelectric material and utilized interface engineering to control its polarization. By precisely manipulating the atomic stacking sequence at the interface, we influenced the electrostatic potential step across the interface, resulting in a bias voltage in the ferroelectric hysteresis loops that defined the ferroelectric state.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!