We present high efficiency and stable inverted PSCs (i-PSC) by employing sol-gel processed simultaneously doped ZnO by Indium and fullerene derivative (BisNPC60-OH) (denoted as InZnO-BisC60) film as cathode interlayer and PTB7-Th:PC71BM as the active layer (where PTB7-Th is a low bandgap polymer we proposed previously). This dual-doped ZnO, InZnO-BisC60, film shows dual and opposite gradient dopant concentration profiles, being rich in fullerene derivative at the cathode surface in contact with active layer and rich in In at the cathode surface in contact with the ITO surface. Such doping in ZnO not only gives improved surface conductivity by a factor of 270 (from 0.015 to 4.06 S cm(-1)) but also provides enhanced electron mobility by a factor of 132 (from 8.25*10(-5) to 1.09*10(-2) cm(2) V(-1) s(-1)). The resulting i-PSC exhibits the improved PCE 10.31% relative to that with ZnO without doping 8.25%. This PCE 10.31% is the best result among the reported values so far for single junction PSC.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4212227 | PMC |
http://dx.doi.org/10.1038/srep06813 | DOI Listing |
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