AI Article Synopsis
- The n-ZnO/p-Si heterojunction was created using a 5 nm Al₂O₃ buffer layer via atomic layer deposition.
- X-ray diffraction analysis indicated that the presence of the Al₂O₃ layer enhanced the crystalline quality of the (100)-oriented ZnO films.
- The optimized 5 nm Al₂O₃ layer resulted in superior electrical performance, evidenced by a low dark current of 0.5 μA at -2 V and an 8-fold increase in the photo-to-dark current ratio, highlighting its benefits for photodetector applications.
Article Abstract
The n-ZnO/p-Si heterojunction with an ultrathin Al₂O₃ buffer layer was prepared by atomic layer deposition. X-ray diffraction revealed that the crystalline quality of (100)-oriented ZnO films was improved with an Al₂O₃ buffer layer. The n-ZnO/p-Si heterojunction with 5 nm inserted Al₂O₃ layer shows the best electrical characteristics, with a dark current of 0.5 μA at a reverse bias of -2 V and increasing the photo-to-dark current ratio effectively by 8 times. These results demonstrated that Al₂O₃ buffer layer with optimized thickness exhibits significant advantages in enhancing the crystal quality of ZnO film and improving the photoelectrical properties of n-ZnO/p-Si photodetectors.
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| http://dx.doi.org/10.1364/OE.22.022184 | DOI Listing |
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