Nitrogen-doped graphene synthesis with ∼g scale has been accomplished using the arc discharge method. The defects formed in the synthesis process were reduced by adding various metal catalysts, among which Bi2O3 was found to be the most effective. Adding dopants to the starting materials increased the electrical conductivity of the graphene product, and the doping concentration in graphene was tuned by adjusting the amount of nitrogen dopants. A step-wise technique to fabricate graphene thin films was developed, including dispersion, separation, and filtering processes. The arc graphene can also find its potential application in supercapacitors, taking advantage of its large surface area and improved conductivity by doping.
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