Tuning polymorphism and orientation in organic semiconductor thin films via post-deposition processing.

J Am Chem Soc

Department of Chemical and Biological Engineering, Princeton University, A323 Engineering Quadrangle, Princeton, New Jersey 08544, United States.

Published: November 2014

AI Article Synopsis

  • Researchers have discovered a method to independently control the crystalline polymorph and molecular orientation of contorted hexabenzocoronene (c-HBC) thin films after deposition, which is typically difficult to achieve.
  • They identified three polymorphs of c-HBC, including two that are newly reported, and demonstrated how these variations influence the device performance in thin-film transistors (TFTs).
  • This study reveals that both polymorphism and molecular orientation significantly impact charge carrier mobility in TFTs, with changes to either factor leading to an order of magnitude shift in performance.

Article Abstract

Though both the crystal structure and molecular orientation of organic semiconductors are known to impact charge transport in thin-film devices, separately accessing different polymorphs and varying the out-of-plane molecular orientation is challenging, typically requiring stringent control over film deposition conditions, film thickness, and substrate chemistry. Here we demonstrate independent tuning of the crystalline polymorph and molecular orientation in thin films of contorted hexabenzocoronene, c-HBC, during post-deposition processing without the need to adjust deposition conditions. Three polymorphs are observed, two of which have not been previously reported. Using our ability to independently tune the crystal structure and out-of-plane molecular orientation in thin films of c-HBC, we have decoupled and evaluated the effects that molecular packing and orientation have on device performance in thin-film transistors (TFTs). In the case of TFTs comprising c-HBC, polymorphism and molecular orientation are equally important; independently changing either one affects the field-effect mobility by an order of magnitude.

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Source
http://dx.doi.org/10.1021/ja5091035DOI Listing

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