Improving the field-effect performance of Bi2S3 single nanowires by an asymmetric device fabrication.

Chemphyschem

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing100083 (China).

Published: January 2015

AI Article Synopsis

  • High-quality Bi2 S3 nanowires are synthesized using chemical vapor deposition to study their photoresponsive and field-effect properties.
  • Among the electrode pairs tested (Au-Au, Ag-Ag, and Au-Ag), the asymmetric Au-Ag setup exhibits the highest mobility due to its stepwise band alignment.
  • The light exposure leads to a significant sevenfold reduction in the on/off ratio, attributed to an increase in the off-state current (Ioff) due to photoexcited charge carriers.

Article Abstract

High-quality Bi2 S3 nanowires are synthesized by chemical vapor deposition and their intrinsic photoresponsive and field-effect characteristics are explored in detail. Among the studied Au-Au, Ag-Ag, and Au-Ag electrode pairs, the device with stepwise band alignment of asymmetric Au-Ag electrodes has the highest mobility. Furthermore, it is shown that light can cause a sevenfold decrease of the on/off ratio. This can be explained by the photoexcited charge carriers that are more beneficial to the increase of Ioff than Ion . The photoresponsive properties of the asymmetric Au-Ag electrode devices were also explored, and the results show a photoconductive gain of seven with a rise time of 2.9 s and a decay time of 1.6 s.

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http://dx.doi.org/10.1002/cphc.201402594DOI Listing

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