AI Article Synopsis
- The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions were measured using X-ray photoemission spectroscopy.
- A significant asymmetry was found between the forward and backward band offsets in these heterojunctions.
- The valence-band offsets were determined to be 1.33 ± 0.16 eV for GaN/AlN and 0.73 ± 0.16 eV for AlN/GaN, with a notable 0.6 eV difference attributed to piezoelectric strain effects in the non-polar layers.
Article Abstract
The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4167304 | PMC |
| http://dx.doi.org/10.1186/1556-276X-9-470 | DOI Listing |
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