Unlabelled: Mesoporous silicon and porous silicon/Ni nanocomposites have been investigated in this work employing light-dark surface photovoltage (SPV) transients to monitor the response of surface charge dynamics to illumination changes. The samples were prepared by anodization of a highly n-doped silicon wafer and a subsequent electrodepositing of Ni into the pores. The resulting pores were oriented towards the surface with an average pore diameter of 60 nm and the thickness of the porous layer of approximately 40 μm. SPV was performed on a bare porous silicon as well as on a Ni-filled porous silicon in vacuum and in different gaseous environments (O2, N2, Ar). A significant difference was observed between the 'light-on' and 'light-off' SPV transients obtained in vacuum and those observed in gaseous ambiences. Such behavior could be explained by the contribution to the charge exchange in gas environments from chemisorbed and physisorbed species at the semiconductor surface.
Pacs: 81.05.Rm; 73.20.-r; 75.50.-y; 82.45.Yz.
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http://dx.doi.org/10.1186/1556-276X-9-423 | DOI Listing |
RSC Adv
January 2025
School of Physical Science and Technology, Xinjiang University 666 Shengli Road Urumqi 830046 China
This study has successfully prepared three kinds of surface enhanced raman scattering (SERS) substrates, namely AgNP/CuNPs/Bragg-PSi (porous silicon, PSi), AgNPs/CuNPs/PSi and AuNPs/CuNPs/Bragg-PSi by use of an anode electrochemical etching method and a dip plating method. Results show that: the AgNPs/CuNPs/Bragg-PSi substrate has optimal SERS performance and is capable of detecting the Raman spectrum ( = 0.9315) of a 10 M-10 M crystal violet (CV) solution.
View Article and Find Full Text PDFLangmuir
January 2025
College of Chemical Engineering, Inner Mongolia University of Technology, Hohhot 010051, China.
In order to solve the shortcomings of a single flocculant, the inorganic-organic hybrid flocculant SiO-CTS-DMDACC was successfully prepared by grafting copolymerization of chitosan (CTS), dimethyl diallyl ammonium chloride (DMDACC), and silicon dioxide (SiO). The performance of SiO-CTS-DMDACC in treating papermaking wastewater was investigated, and the mechanism of the flocculation process was analyzed. The results showed that the crystallinity of chitosan was reduced due to the introduction of DMDACC and SiO.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Drug Delivery, Disposition and Dynamics, Monash Institute of Pharmaceutical Sciences, Monash University, Parkville, Victoria 3052, Australia.
Biosensors play a critical role in modern diagnostics, offering high sensitivity and specificity for detecting various relevant clinical analytes as well as real-time monitoring and integrability in point-of-care (POC) platforms and wearable/implantable devices. Among the numerous materials used as biosensing substrates, porous silicon (pSi) has garnered significant attention due to its tunable properties, ease of fabrication, large surface area, and versatile surface chemistry. These attributes make pSi an ideal platform for transducer development, particularly in the fabrication of optical and electrochemical biosensors.
View Article and Find Full Text PDFArtificial bone, primarily composed of calcium carbonate, demonstrates a higher resorption rate than calcium phosphate-based counterparts, suggesting potential for early bone replacement. Animal experiments using porous calcium carbonate ceramics have demonstrated bone formation superior to commercially available artificial bone after short-term implantation. Long-term implantation has yielded suboptimal results owing to resorption of both newly formed bone and implantation material.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials Science and Engineering, Tianjin Key Lab for Rare Earth Materials and Applications, Nankai University, Tianjin 300350, China.
For silicon-based devices using dielectric oxides doped with rare earth ions, their electroluminescence (EL) performance relies on the sufficient carrier injection. In this work, the atomic GaO layers are inserted within the Er-doped GeO nanofilms fabricated by atomic layer deposition (ALD). Both Ga(CH) and Ga(CH) could realize the ALD growth of GaO onto the as-deposited GeO nanofilm with unaffected deposition rates.
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