A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/adma.201401732 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
3D active-matrix multimodal sensor arrays for independent detection of pressure and temperature.
Sci Adv
January 2025
Department of Convergence IT Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea.
Pressure and temperature sensing simultaneously and independently is crucial for creating electronic skin that replicates complex sensory functions of human skin. Thin-film transistor (TFT) arrays with sensors have enabled cross-talk-free spatial sensing. However, the thermal dependence of charge transport in semiconductors has resulted in interference between thermal and pressure stimuli.
View Article and Find Full Text PDFDesign of an Atomic Layer-Deposited InO/GaO Channel Structure for High-Performance Thin-Film Transistors.
ACS Appl Mater Interfaces
January 2025
Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
For potential application in advanced memory devices such as dynamic random-access memory (DRAM) or NAND flash, nanolaminated indium oxide (In-O) and gallium oxide (Ga-O) films with five different vertical cation distributions were grown and investigated by using a plasma-enhanced atomic layer deposition (PEALD) process. Specifically, this study provides an in-depth examination of how the control of individual layer thicknesses in the nanolaminated (NL) IGO structure impacts not only the physical and chemical properties of the thin film but also the overall device performance. To eliminate the influence of the cation composition ratio and overall thickness on the IGO thin film, these parameters were held constant across all conditions.
View Article and Find Full Text PDFFabrication of high-performance tin halide perovskite thin-film transistors via chemical solution-based composition engineering.
Nat Protoc
January 2025
Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea.
Metal halide perovskite semiconductors have attracted considerable attention because they enable the development of devices with exceptional optoelectronic and electronic properties via cost-effective and high-throughput chemical solution processes. However, challenges persist in the solution processing of perovskite films, including limited control over crystallization and the formation of defective deposits, leading to suboptimal device performance and reproducibility. Tin (Sn) halide perovskite holds promise for achieving high-performance thin-film transistors (TFTs) due to its intrinsic high hole mobility.
View Article and Find Full Text PDFImprovement of glucose detection using 10 nm AlO thin film on diamond solution-gate field-effect transistor.
Talanta
January 2025
Key Laboratory for Physical Electronics and Devices of the Ministry of Education & School of Science & Shaanxi Key Laboratory of Information Photonic Technique & Institute of Wide Bandgap Semiconductors, Xi'an Jiaotong University, Xi'an, 710049, China. Electronic address:
Glucose detection is crucial for diagnosis, prevention and treatment of diabetes mellitus. In this work, 10 nm AlO thin film was introduced on the channel of diamond solution-gate field-effect transistor (SGFET) to improve the performance of glucose detection. AFM results show the roughness of channel surface increased after AlO thin film deposition.
View Article and Find Full Text PDFN-oxide-Functionalized Bipyridines as Strong Electron-Deficient Units to Construct High-Performance n-Type Conjugated Polymers.
Adv Sci (Weinh)
January 2025
Key Laboratory of Functional Molecular Solids, Ministry of Education, School of Chemistry and Materials Science, Anhui Normal University, No.189, Jiuhua South Road, Wuhu, Anhui, 241002, China.
Developing low-cost unipolar n-type organic thin-film transistors (OTFTs) is necessary for logic circuits. To achieve this objective, the usage of new electron-deficient building blocks with simple structure and easy synthetic route is desirable. Among all electron-deficient building units, N-oxide-functionalized bipyridines can be prepared through a simple oxidized transformation of bipyridines.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!