To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved deposition rate in the mass-transport-limit region and increased adatom mobility were realized under extremely low reactor pressure.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4166946 | PMC |
| http://dx.doi.org/10.1038/srep06416 | DOI Listing |
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