Preliminary results on the fabrication of a memristive device made of zinc oxide (ZnO) over a mesoporous silicon substrate have been reported. Porous silicon (PS) substrate is employed as a template to increase the formation of oxygen vacancies in the ZnO layer and promote suitable grain size conditions for memristance. Morphological and optical properties are investigated using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. The proposed device exhibits a zero-crossing pinched hysteresis current-voltage (I-V) curve characteristic of memristive systems.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4150548 | PMC |
| http://dx.doi.org/10.1186/1556-276X-9-437 | DOI Listing |
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