Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation.

ScientificWorldJournal

Department of Electrical and Electronic Engineering, Universiti Putra Malaysia, 43400 Serdang, Malaysia.

Published: April 2015

This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2).

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4150493PMC
http://dx.doi.org/10.1155/2014/163414DOI Listing

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