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Atomic-scale characterization of oxide thin films gated by ionic liquid. | LitMetric

Atomic-scale characterization of oxide thin films gated by ionic liquid.

ACS Appl Mater Interfaces

Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States.

Published: October 2014

AI Article Synopsis

  • Ionic liquids (ILs) are being explored for their potential in electrostatic gating within complex oxide systems, making it essential to study their interface with oxides and any resulting electrochemical degradation.
  • Research focused on the interface between 1-ethyl-3-methylimidazolium hexafluorophosphate and La1/3Sr2/3FeO3 showed irreversible degradation due to chemical reactions, regardless of electrical bias.
  • Analysis revealed a 4-6 nm intermixing region at the IL/oxide boundary, with La and Fe migrating into the ionic liquid, leading to the formation of secondary phases, indicating the need to explore this phenomenon in other ionic liquid/oxide combinations for better electrochemical stability insights.

Article Abstract

Ionic liquids (ILs) have received considerable interest for use in electrostatic gating in complex oxide systems. Understanding the ionic liquid/oxide interface, and any bias-induced electrochemical degradation, is critical for the interpretation of transport phenomena. The integrity of the interface between ionic liquid 1-ethyl-3-methylimidazolium hexafluorophosphate and La1/3Sr2/3FeO3 under various biasing conditions was examined by analytical transmission electron microscopy, and we report film degradation in the form of an irreversible chemical reaction regardless of the applied bias. This results in an intermixing region of 4-6 nm at the IL/oxide interface. Electron energy loss spectroscopy shows La and Fe migration into the ionic liquid, resulting in secondary phase formation under negative bias. Our approach can be extended to other ionic liquid/oxide systems in order to better understand the electrochemical stability window of these device structures.

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Source
http://dx.doi.org/10.1021/am504547bDOI Listing

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